C.J. Wordelman, N.R. Aluru, U. Ravaioli¹

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 121-126, 2000, DOI:10.3970/cmes.2000.001.121

Abstract This paper describes the application of the meshless Finite Point (FP) method to the solution of the nonlinear semiconductor Poisson equation. The FP method is a true meshless method which uses a weighted least-squares fit and point collocation. The nonlinearity of the semiconductor Poisson equation is treated by Newton-Raphson iteration, and sparse matrices are employed to store the shape function and coefficient matrices. Using examples in two- and three-dimensions (2- and 3-D) for a prototypical n-channel MOSFET, the FP method demonstrates promise both as a means of mesh enhancement and for treating problems where arbitrary point placement is advantageous, such… More >

Wenjing Ye¹, Subrata Mukherjee²

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 111-120, 2000, DOI:10.3970/cmes.2000.001.111

Abstract Polynomial driving-force comb drives are designed using numerical simulation. The electrode shapes are obtained using the indirect boundary element method. Variable gap comb drives that produce combinations of linear, quadratic, and cubic driving-force profiles are synthesized. This inverse problem is solved by an optimization procedure. Sensitivity analysis is carried out by the direct differentiation approach (DDA) in order to compute design sensitivity coefficients (DSCs) of force profiles with respect to parameters that define the shapes of the fingers of a comb drive. The DSCs are then used to drive iterative optimization procedures. Designs of variable gap comb drives with linear,… More >

K. Kaminishi¹, M. Iino², H. Bessho², M. Taneda³

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 107-110, 2000, DOI:10.3970/cmes.2000.001.107

Abstract An FEA (finite element analysis) program employing a new scheme for crack growth analysis is developed and a prediction method for crack growth life is proposed. The FEA program consists of the subroutines for the automatic element re-generation using the Delaunay Triangulation technique, the element configuration in the near-tip region being provided by a super-element, elasto-inelastic stress analyses, prediction of crack extension path and calculation of fatigue life. The FEA results show that crack extension rate and path are controlled by a maximum opening stress range, Δσ_θmax, at a small radial distance of r = d, where d is chosen… More >

N. Miyazaki¹, T. Tamura², K. Yamamoto¹

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 99-106, 2000, DOI:10.3970/cmes.2000.001.099

Abstract Quantitative estimation of the failure of a gadolinium orthosilicate (Gd₂SiO₅, hereafter abbreviated as GSO) single crystal induced by thermal stress was investigated. A GSO cylindrical test specimen was heated in a silicone oil bath, then subjected to large thermal stress by room temperature silicone oil. Cracking occurred during cooling. The transient heat conduction analysis was performed to obtain temperature distribution in the test specimen at the time of cracking, using the surface temperatures measured in the test. Then the thermal stress was calculated using the temperature profile of the test specimen obtained from the heat conduction analysis. It is found… More >

Toru Ikeda¹, Isao Arase, Yuya Ueno, Noriyuki Miyazaki

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 91-98, 2000, DOI:10.3970/cmes.2000.001.091

Abstract In electronic devices, the corners of joined dissimilar materials exist between plastic resin and a die pad or a chip. Failure of the plastic resin is often caused from these corners during the assembly process or the operation of products. The strength evaluation of the corner is important to protect the failure of plastic packages. To evaluate the singular stress field around a corner, we utilize the stress intensity factors of the asymptotic solution for a corner of joined dissimilar materials. We show that the accurate stress intensity factor can be analyzed by the displacement extrapolation method using the displacement… More >

A.N. Gulluoglu¹, C.T. Tsai²

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 85-90, 2000, DOI:10.3970/cmes.2000.001.085

Abstract Twins in growing crystals are due to excessive thermal stresses induced by the temperature gradients developed during the growth process. Twinning is an important defect in advanced semiconductor crystals such as GaAS and InP. The objective of this study is to develop a computational model to predict the twin formation in the Gallium Arsenide (GaAs) crystals grown by the vertical gradient freeze method (VGF). A quantitative quasi-steady state thermal stress model is developed here for predicting the twinning formation in GaAs grown by VGF. The thermoelastic stresses in VGF grown crystal are calculated from a two-dimensional finite element analysis. Deformation… More >

K. Garikipati¹, V.S. Rao², M.Y. Hao³, E. Ibok⁴, I. de Wolf⁵, R. W. Dutton⁶

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 65-84, 2000, DOI:10.3970/cmes.2000.001.065

Abstract This work is based upon a careful rendering of mechanics and mathematics to describe the phenomena that influence the stress engendered by the Shallow Trench Isolation process. The diffusion-reaction problem is posed in terms of fundamental mass balance laws. Finite strain kinematics is invoked to model the large expansion of SiO₂, dielectrics are modelled as viscoelastic solids and annealing-induced density relaxation of SiO₂ is incorporated as a history-dependent process. A levelset framework is used to describe the moving Si/SiO₂ interface. Sophisticated finite element methods are employed to solve the mathematical equations posed for each phenomenon. These include the incorporation of… More >

B. F. Romanowicz¹, M. H. Zaman¹, S. F. Bart¹, V. L. Rabinovich¹, I. Tchertkov¹, S. Zhang¹, M. G. da Silva¹, M. Deshpande¹, K. Greiner¹, J. R. Gilbert¹, Shawn Cunningham²

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 45-64, 2000, DOI:10.3970/cmes.2000.001.045

Abstract Development of micro-electro-mechanical systems (MEMS) products is currently hampered by the need for design aids, which can assist in integration of all domains of the design. The cross-disciplinary character of microsystems requires a top-down approach to system design which, in turn, requires designers from many areas to work together in order to understand the effects of one sub-system on another. This paper describes current research on a methodology and tool-set which directly support such an integrated design process. More >

S. Taschini¹, J. Müller², A. Greiner², M. Emmenegger¹, H. Baltes¹, J.G. Korvink²

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 31-44, 2000, DOI:10.3970/cmes.2000.001.031

Abstract We present three techniques to accurately model the thermomechanical response of microsystem components: a new, accurate and stable Kirchhoff-Love multi-layered plate model implemented as an Argyris finite element, a model for the amplitude fluctuations of vibrational modes in micro-mechanical structures within a gaseous environment, and the consistent refinement of a finite element mesh in order to maximize the computational accuracy for a given mesh size. We have implemented these techniques in our in-house MEMS finite element program and accompanying Monte Carlo simulator. We demonstrate our approach to dynamic modeling by computing the thermomechanical response of a CMOS AFM beam. More >

Per Ljung¹, Martin Bächtold², Mirko Spasojevic²

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 21-30, 2000, DOI:10.3970/cmes.2000.001.021

Abstract This paper presents AutoMEMS®, a numerical simulation environment to efficiently analyze the behavior of large real-world MEMS designs. By automating surface-based model generation, meshing and field solver tools, it is possible to rapidly model large complex MEMS devices. More >