Open Access

ARTICLE

Structure and electronic properties of thin Ge₂Sb₂Te₅ films produced by DC ion-plasma spattering

S. Sultanbekov^a, O. Prikhodko^b, N. Almas^c,*

a Volkovgeology JSC, Kazatomprom, 168, Bogenbai batyr Street, Almaty, Kazakhstan, 050012
b IETP, NAO Al-Farabi Kazakh National University, 71 Al-Farabi Avn, 050040, Almaty, Kazakhstan
c Department of Science and Innovation, Astana IT University, Mangilik Yel, 55/11, Astana, Kazakhstan, 010000

* Corresponding Author:

Chalcogenide Letters 2023, 20(7), 487-496. https://doi.org/10.15251/CL.2023.207.487

Received 13 April 2023; Accepted 17 July 2023;

Abstract

The optical properties of Ge₂Sb₂Te₅ thin films were studied as a function of thickness. An increase in optical band gap with decreasing film thickness has been observed. The current– voltage characteristics measured in Ge₂Sb₂Te₅ thin films in the current mode are studied. A decrease in switching time and threshold voltage with decreasing film thickness is established.

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Keywords

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