Open Access

ARTICLE

Study of CdSe thin films using the spectroscopic ellipsometry method

L. N. Ibrahimova^a,b, Kh. N. Ahmadova^c,d,e, M. E. Aliyev^b, Y. I. Aliyev^f,g,*

a Institute of Natural Resources, Ministry of Science and Education Republic of Azerbaijan, Nakhchivan, AZ-7000, Azerbaijan
b Nakhchivan State University, Nakhchivan, AZ-7012, Azerbaijan
c Institute of Physics, Ministry of Science and Education Republic of Azerbaijan, Baku, AZ-1143, Azerbaijan
d Azerbaijan State Oil and Industry University, Baku, AZ-1010 Azerbaijan
e Khazar University, AZ-1096, Baku, Azerbaijan
f Azerbaijan State Pedagogical University, Baku, AZ-1000, Azerbaijan
g Western Caspian University, Baku, AZ-1001, Azerbaijan

* Corresponding Author:

Chalcogenide Letters 2024, 21(12), 1035-1039. https://doi.org/10.15251/CL.2024.2112.1035

Received 06 September 2024; Accepted 23 December 2024;

Abstract

In this research, we investigated the optical properties of CdSe thin films on glass substrates using spectroscopic ellipsometry. The samples were analysed using an M-2000 rotation compensator spectroscopic ellipsometer at room temperature, covering a photon energy range of 1.5-7.0 eV. We used an appropriate dispersion model to obtain the spectral dispersion of the optical constants. We calculated the thickness, dielectric permittivity (real and imaginary parts), refraction, and extinction coefficients of the thin layers. The results showed high transparency that varied with the size of the CdSe thin films. Additionally, we determined the bandgap width for samples with thicknesses of 350 nm and 400 nm, which were produced using the chemical deposition method.

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Keywords

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