Open Access

ARTICLE

Properties investigation of ZnS/porous silicon heterojunction for gas sensing

F. B. ohammed Ameen^a, M. H. Younus^b, G. G. Ali^c,*

Physics Department, College of Education for Pure Science, Mosul University, Iraq

* Corresponding Author:

Chalcogenide Letters 2024, 21(4), 343-354. https://doi.org/10.15251/CL.2024.214.343

Received 11 February 2024; Accepted 26 April 2024;

Abstract

In this work, the gas sensing properties of ZnS/Porous silicon heterostructures have been investigated. . Zinc sulfide(ZnS) with high gas sensing performance is successfully synthesized over the Porous silicon substrate by the spray pyrolysis method. The properties of the as-prepared samples were characterized X-ray diffraction (XRD), scanning electron microscope (SEM), Fourier transform spectrum (FTIR) and optical properties. The results reveal that the properties of the ZnS/Porous silicon heterostructures enhanced when the when the ZnS concentration is increased. The performance ZnS/Porous silicon as a gas-sensing show that the maximum sensitivity is found to be 5.11 at ZnS concentration of 0.5 M and etching time of 15 min compared to the other sensitivities. The ZnS-PSi heterojunction based gas sensor may be used for UV-light photo-detectors due to a valuable properties such as high sensitivity and fast response.

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Keywords

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