Open Access

ARTICLE

Investigation of the Influence of Variations in Thickness and Concentration on the Optoelectronic Characteristics of p-CuI/n-InSe Photodetector

Naeemah A. Aswad, Ayed N. Saleh^*

Physics Department, College of Education for Pure Science, University of Tikrit, Tikrit, 34001, Iraq

* Corresponding Author: A. N. Saleh. Email:

Chalcogenide Letters 2025, 22(12), 1019-1029. https://doi.org/10.15251/CL.2025.2212.1019

Accepted 27 October 2025; Issue published 06 December 2025

Abstract

The SCAPS-1D software was used to simulate a p–CuI/n–InSe photodetector at 300 K with AM1.5G light. The simulation results showed that, with a quantum efficiency of 97.6% at 800 nm and a responsivity of 0.67 A/W, the ideal absorber layer thickness of 0.8 µm produced the highest overall performance. The specific detectivity was enhanced to 2.5 × 10¹⁵ cm·Hz^1/2 ·W⁻³ and the dark current was decreased by increasing the InSe carrier concentration from 1 × 10¹⁵ cm⁻³ to 3 × 10¹⁵ cm⁻³ . These findings show that the CuI/InSe heterojunction’s broadband response, strong responsivity, and low dark current make it a viable option for near-infrared photodetection applications.

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Keywords

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