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Enhanced physical and optoelectronic properties of Ag-doped SnS thin films
a
Dept. of H&S (Physics), Gokaraju Rangaraju Institute of Engineering &
Technology(A), Hyderabad-500090, T.S., India
b
Dept. of Physics, Malla Reddy Engineering College(A), Hyderabad-500100, T.S.,
India
c
Department of Physics, G. Pulla Reddy Engineering College(A), Kurnool518007,
A.P., India
d
Dept. of H & S (Chemistry), St. Peter’s Engineering College(A), Hyderabad500100,
T.S., India
e
Dept. of Physics, CMR College of Engineering & Technology(A), Kandlakoya,
Hyderabad-501401, T.S., India
f
Dept. of Freshman Engineering, Audisankara college of engineering, Gudur524101,
A.P., India
g
Dept. of H & S (Physics), St. Peter’s Engineering College(A), Hyderabad500100,
T.S., India
h
Department of Physics, CVR College of Engineering(A), Hyderabad-501510,
T.S., India
i
Dept. Of Physics, P.S. Govt. Degree College, Penukonda-515110, Sri Satya Sai
Dist., A.P., India
* Corresponding Author:
Chalcogenide Letters 2025, 22(2), 143-149. https://doi.org/10.15251/CL.2025.222.143
Received 27 November 2024; Accepted 06 February 2025;
Abstract
SnS thin films doped with two atomic % Ag are deposited on a pyrex glass substrates using chemical bath deposition method. The impact of 2 atomic % silver doping on the physical properties of SnS thin films is studied. X-ray diffraction studies confirmed that the deposited SnS films were of α-SnS phase with an orthorhombic crystal structure, which remained stable despite the addition of 2 at.% silver. It is observed that the addition of 2 atomic % silver to SnS chemical bath solution does not greatly influence the structural properties of SnS thin film. The deposition is carried out at different bath temperatures from 50℃ to 80℃. Additionally, structural parameters such as crystallite size, dislocation density, and lattice strain were analyzed, offering deeper insights into the quality and structural properties of the SnS films.Keywords
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Copyright © 2025 The Author(s). Published by Tech Science Press.This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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