Open Access

ARTICLE

Investigation of temporal characteristics of photosensitive heterostructures based on gallium arsenide and silicon

F. A. Giyasova^a, M. A. Yuldoshev^b,d,*

a Kimyo International University in Tashkent, Uzbekistan
b University of business and science, Namangan, Uzbekistan
d Alfraganus university, Tashkent, Uzbekistan

* Corresponding Author:

Chalcogenide Letters 2025, 22(2), 123-129. https://doi.org/10.15251/CL.2025.222.123

Received 29 October 2024; Accepted 03 February 2025;

Abstract

The paper briefly describes the methodology for studying the temporal characteristics of near-IR photodiode structures under the influence of pulsed radiation from a semiconductor laser with a wavelength of 1100 and 1320 nm. The results of studying the response time of multilayer photosensitive Au-nCdS-nSi-pCdTe-Au and Au-nInP-nCdSνGaAs:O-Au structures with potential barriers are presented. It has been experimentally shown that the structures under study are not inferior in response time to known analogs based on gallium arsenide and silicon heterostructures, and can also be used in a wide optical range.

---

Keywords

---