Open Access iconOpen Access

ARTICLE

Properties of Bi2O2S Thin Films Produced by Chemical Bath Deposition at Different Immersion Bath Numbers

Edgar G. Zamorano-Noriega1, María E. Martínez-Barbosa1,*, María L. Mota2, Ana B. López-Oyama3,4, Eugenio Rodríguez González5, Crescencio García-Guendulain6, Ramón Ochoa-Landín7, Fernando J. Sánchez-Rodríguez8,*, Santos J. Castillo3,*

1 Departamento de Investigación en Polímeros y Materiales, Universidad de Sonora, Blvd. Luis Encinas S/N, Hermosillo, Mexico
2 Secihti-InnovaBienestar de México, Ciencia y Tecnología #790, Col Saltillo 400, Saltillo, 25290, Coahuila, Mexico
3 Departamento de Investigación en Física (DIFUS), Universidad de Sonora, Blvd. Luis Encinas S/N, Hermosillo, Mexico
4 Secihti-DIFUS, Universidad de Sonora, Blvd. Luis Encinas S/N, Hermosillo, Mexico
5 Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada-Unidad Altamira, Instituto Politécnico Nacional, km 14.5 Carr. Puerto Industrial, Altamira, Mexico
6 Escuela de Ingeniería y Ciencias, Tecnológico de Monterrey, Mexico City, Mexico
7 Departamento de Física, Universidad de Sonora, Blvd. Luis Encinas S/N, Hermosillo, Mexico
8 Facultad de Ciencias Físico-Matemáticas, Universidad de Autónoma de Sinaloa, Culiacán, Mexico

* Corresponding Authors: María E. Martínez-Barbosa. Email: email; Fernando J. Sánchez-Rodríguez. Email: email; Santos J. Castillo. Email: email

Chalcogenide Letters 2026, 23(6), 6 https://doi.org/10.32604/cl.2026.085590

Abstract

The major challenge in developing efficient photovoltaic devices is achieving highlight absorption, optimal charge transport, and low recombination losses. In this work, the effect of the immersion bath numbers in the chemical bath deposition (CBD) technique on the properties of bismuth oxysulfide (Bi2O2S) thin films, as emergent materials, was studied. The films were synthesized under eco-friendly conditions, using a low-concentration bismuth nitrate precursor and thioacetamide as the sulfur source, and under basic conditions at moderate temperature, with a reaction time of 3 h. X-ray diffraction demonstrated the formation of a crystalline Bi2O2S phase, and the morphological analysis showed a uniform film coverage with flower-like morphology, indicating anisotropic growth. XPS verified the coexistence of bismuth, oxygen, and sulfur, confirming the formation of the oxysulfide compound. Results demonstrated that absorbance increased as the number of immersion bath numbers increased. Indeed, structural analysis established that the number of immersion baths critically influences crystallite size, interlayer spacing, and crystallinity of Bi2O2S nanosheets. Finally, a formation mechanism is proposed for these Bi2O2S thin films for the one-, two-, and three-immersion bath. This study demonstrates that CBD processing parameters critically influence film quality and phase purity, offering an effective and low-cost route to produce Bi-based thin films with potential applications in photovoltaic devices.

Keywords

Bismuth oxysulfide; Bi2O2S; chemical bath deposition; immersion bath numbers; thin film; semiconductor

Supplementary Material

Supplementary Material File

Cite This Article

APA Style
Zamorano-Noriega, E.G., Martínez-Barbosa, M.E., Mota, M.L., López-Oyama, A.B., Rodríguez González, E. et al. (2026). Properties of Bi2O2S Thin Films Produced by Chemical Bath Deposition at Different Immersion Bath Numbers. Chalcogenide Letters, 23(6), 6. https://doi.org/10.32604/cl.2026.085590
Vancouver Style
Zamorano-Noriega EG, Martínez-Barbosa ME, Mota ML, López-Oyama AB, Rodríguez González E, García-Guendulain C, et al. Properties of Bi2O2S Thin Films Produced by Chemical Bath Deposition at Different Immersion Bath Numbers. Chalcogenide Letters. 2026;23(6):6. https://doi.org/10.32604/cl.2026.085590
IEEE Style
E. G. Zamorano-Noriega et al., “Properties of Bi2O2S Thin Films Produced by Chemical Bath Deposition at Different Immersion Bath Numbers,” Chalcogenide Letters, vol. 23, no. 6, pp. 6, 2026. https://doi.org/10.32604/cl.2026.085590



cc Copyright © 2026 The Author(s). Published by Tech Science Press.
This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
  • 234

    View

  • 67

    Download

  • 0

    Like

Share Link