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Structural Relaxation and Thermal Robustness of Electron-Beam Evaporated As2Se3 Films for Far-Infrared Heterogeneous Metalenses
1 Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, China
2 Laboratory of Infrared Material and Devices & Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Advanced Technology Research Institute, Ningbo University, Ningbo, China
* Corresponding Authors: Zhaofeng Gu. Email: ; Yimin Chen. Email:
Chalcogenide Letters 2026, 23(8), 4 https://doi.org/10.32604/cl.2026.089518
Received 21 July 2026; Accepted 26 August 2026; Issue published 18 September 2026
Abstract
This study presents electron-beam evaporated As2Se3 films tailored for far-infrared heterogeneous metalenses. Characterization via X-ray diffraction and Raman spectroscopy reveals a structurally relaxed network in the films compared to bulk glass, resulting in enhanced infrared transmittance, a reduced refractive index, and a lower glass transition temperature. However, thermal expansion mismatch is found to induce cracking in thick films subjected to thermal cycling. The As2Se3/BaF2 system demonstrates superior adhesion, attributed to a minimal thermal expansion mismatch (Δα < 2.5 × 10−6°C−1). Notably, an 8 μm thick film endures over thirty rapid heating and liquid nitrogen quenching cycles without degradation, while maintaining a subwavelength thickness and optical properties suitable for metalens design. These findings establish the As2Se3/BaF2 platform as a robust candidate for environmentally stable infrared heterogenous metasurfaces.Keywords
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Copyright © 2026 The Author(s). Published by Tech Science Press.This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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