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Effects of High Magnetic Field and Post-Annealing on the Evaporated Ni/Si (100) Thin Films

Jiaojiao Du1, Guojian Li1, Qiang Wang1,2, Yongze Cao1, Jicheng He1, Yonghui Ma1
Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819, China.
Corresponding author. Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, No. 3-11 Wenhua Road, Heping District, Shenyang, Liaoning Province, 110819, P. R. China.
* Corresponding Author:Tel: +86-24-83681726, Fax: +86-24-83681758, E-mail address:

Computers, Materials & Continua 2013, 34(2), 117-129. https://doi.org/10.3970/cmc.2013.034.117

Abstract

The effects of high magnetic field and post-annealing on the structural, electrical and magnetic properties of the evaporated Ni films were investigated and compared. The in-situ application of a 6 T magnetic field during evaporation or post-annealing at 200°C did not change the crystal structures of the films. However, the magnetic field makes the films exhibit the smallest grain size and the lowest surface roughness. Crystallinity was improved for both the 6 T films and the annealed films. This leads to the enhancement of saturation magnetization (Ms). The value of Ms for the 0 T films was 588 emu/cm3, while those for the 6 T films and the post-annealing films without magnetic field were 704 and 647 emu/cm3, respectively. In addition, the 6 T films also exhibited the lowest resistivity. These results indicate that the in-situ application of high magnetic field was a much more efficient method than the post-annealing treatment in the increase of film quality and properties.

Keywords

High magnetic fields, thin films, physical vapor deposition, electrical properties, magnetic properties, annealing.

Cite This Article

J. . Du, G. . Li, Q. . Wang, Y. . Cao and Y. . Ma, "Effects of high magnetic field and post-annealing on the evaporated ni/si (100) thin films," Computers, Materials & Continua, vol. 34, no.2, pp. 117–129, 2013.



This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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