Arun K. Nair1, Diana Farkas2, Ronald D. Kriz1
CMES-Computer Modeling in Engineering & Sciences, Vol.24, No.2&3, pp. 239-248, 2008, DOI:10.3970/cmes.2008.024.239
Abstract The indentation response of Ni thin films of thicknesses in the nano scale was studied using molecular dynamics simulations with embedded atom method (EAM) interatomic potentials. Simulations were performed in single crystal films in the [111] orientation with thicknesses of 7nm and 33nm. In the elastic regime, the loading curves observed start deviating from the Hertzian predictions for indentation depths greater than 2.5% of the film thickness. The observed loading curves are therefore dependent on the film thickness. The simulation results also show that the contact stress necessary to emit the first dislocation under the indenter is nearly independent of… More >
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