Mei-Jiau Huang1, Tung-Chun Tsai1, Liang-Chun Liu1,2, Ming-shan Jeng2, Chang-Chung Yang2
CMES-Computer Modeling in Engineering & Sciences, Vol.42, No.2, pp. 107-130, 2009, DOI:10.3970/cmes.2009.042.107
Abstract We develop a Monte-Carlo simulator for phonon transport in nanostructured semiconductors, which solves the phonon Boltzmann transport equation under the gray medium approximation. Proper physical models for the phonon transmission/reflection at an interface between two different materials and proper numerical boundary conditions are designed and implemented carefully. Most of all, we take advantage of geometric symmetry that exists in a system to reduce the computational amount. The validity and accuracy of the proposed MC solver was successfully verified via a 1D transient conduction problem and the cross-plane (1D) and in-plane (2D) phonon transport problems associated with Si/Ge superlattice thin films. More >
Login
Register
