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  • Open Access

    ARTICLE

    Synthesis and Characterization of Cu2ZnSnS4 (CZTS) Thin Films for Gas Sensor Applications

    F. T. Ibrahim1,*, A. A. Qassim2, S. M. A. Al-Dujayli1

    Chalcogenide Letters, Vol.22, No.11, pp. 929-937, 2025, DOI:10.15251/CL.2025.2211.929

    Abstract This work, pulse laser deposition technique was employee to synthesize Cu2ZnSnS4 (CZTS) thin films with different lasing energy (500, 600, 700, 800, 900 mJ). Through using different characterization technique to study structural, optical and gas sensing properties. the use of X-ray diffraction, the samples have polycrystalline with cubic structure. The EDX examination showed that the sample contains a suitable amount of Zn, Sn, Cu, and S atoms to form CZTS. UV-VIS measurement indicates that the synthesis of thin films employing a lower laser energy result in a drop in deposit sample thickness, which in turn More >

  • Open Access

    ARTICLE

    Pulse Laser Deposition of HfO2 Nanoporous-Like Structure, Physical Properties for Device Fabrication

    Shams B. Ali1, Sarmad Fawzi Hamza Alhasan1, Evan T. Salim2,*, Forat H. Alsultany3, Omar S. Dahham4,5

    Journal of Renewable Materials, Vol.10, No.11, pp. 2819-2834, 2022, DOI:10.32604/jrm.2022.021609 - 29 June 2022

    Abstract The pulsed laser deposition (PLD) technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for (HfO2) nanofilms. In many optoelectronics devices and their applications, the presence of a high dielectric substance like a nano HfO2, between the metal contacts and the substrates was critical. We used the Pulsed Laser Deposition method to fabricate an Al/HfO2/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate temperatures. The optical result reveals a high degree of transparency (93%). The optical bandgap of deposited HfO2 films was observed… More >

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