Vol.10, No.11, 2022, pp.2819-2834, doi:10.32604/jrm.2022.021609
OPEN ACCESS
ARTICLE
Pulse Laser Deposition of HfO2 Nanoporous-Like Structure, Physical Properties for Device Fabrication
  • Shams B. Ali1, Sarmad Fawzi Hamza Alhasan1, Evan T. Salim2,*, Forat H. Alsultany3, Omar S. Dahham4,5
1 Laser and Optoelectronic Engineering Department, University of Technology, Baghdad, Iraq
2 Applied Science Department, University of Technology, Baghdad, Iraq
3 Al-Mustaqbal University College, Department of Medical Physics, Hillah, Iraq
4 Center of Excellence Geopolymer and Green Technology, Faculty of Engineering Technology, Universiti Malaysia Perlis, Perlis, Malaysia
5 Department of Civil Engineering, College of Engineering, Cihan University-Erbil, Kurdistan Region, Iraq
* Corresponding Author: Evan T. Salim. Email:
Received 23 January 2022; Accepted 17 March 2022; Issue published 29 June 2022
Abstract
The pulsed laser deposition (PLD) technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for (HfO2) nanofilms. In many optoelectronics devices and their applications, the presence of a high dielectric substance like a nano HfO2, between the metal contacts and the substrates was critical. We used the Pulsed Laser Deposition method to fabricate an Al/HfO2/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate temperatures. The optical result reveals a high degree of transparency (93%). The optical bandgap of deposited HfO2 films was observed to vary between 4.9 and 5.3 eV, with a value of roughly 5.3 eV at the optimal preparation condition. The morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about (0.3 nm). With regard to substrate temperature, the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization. With regard to substrate temperature, the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization. The diode manufactured at 600°C, in particular, had a higher ideality factor value (n = 3.2).
Keywords
Pulse laser deposition; nano films; optoelectronics; HfO2; optical device
Cite This Article
Ali, S. B., Fawzi, S., Salim, E. T., Alsultany, F. H., Dahham, O. S. (2022). Pulse Laser Deposition of HfO2 Nanoporous-Like Structure, Physical Properties for Device Fabrication. Journal of Renewable Materials, 10(11), 2819–2834.
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