Miaocao Wang1, Yuhua Huang1, Jinming Li1, Ling Xu2, Fulong Zhu1,*
CMC-Computers, Materials & Continua, Vol.68, No.1, pp. 743-759, 2021, DOI:10.32604/cmc.2021.016372
Abstract From an ingot to a wafer then to a die, wafer thinning plays an important role in the semiconductor industry. To reveal the material removal mechanism of semiconductor at nanoscale, molecular dynamics has been widely used to investigate the grinding process. However, most simulation analyses were conducted with a single phase space trajectory, which is stochastic and subjective. In this paper, the stress field in wafer thinning simulations of 4H-SiC was obtained from 50 trajectories with spatial averaging and phase space averaging. The spatial averaging was conducted on a uniform spatial grid for each trajectory. A variable named mask was… More >
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