Mallikarjun P. Y.1, Rame Gowda D. N.1, Trisha J. K.1, Varshini M.1, Poornesha S. Shetty1, Mandar Jatkar1,*, Arpan Shah2
CMC-Computers, Materials & Continua, Vol.86, No.3, 2026, DOI:10.32604/cmc.2025.072507
- 12 January 2026
Abstract As circuit feature sizes approach the nanoscale, traditional Copper (Cu) interconnects face significant hurdles posed by rising resistance-capacitance (RC) delay, electromigration, and high power dissipation. These limitations impose constraints on the scalability and reliability of future semiconductor technologies. Our paper describes the new Vertical multilayer Aluminium Boron Nitride Nanoribbon (AlBN) interconnect structure, integrated with Density functional theory (DFT) using first-principles calculations. This study explores AlBN-based nanostructures with doping of 1Cu, 2Cu, 1Fe (Iron), and 2Fe for the application of Very Large Scale Integration (VLSI) interconnects. The AlBN structure utilized the advantages of vertical multilayer interconnects… More >
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