Brent L. Adams, Joshua Kacher
CMC-Computers, Materials & Continua, Vol.14, No.3, pp. 185-196, 2009, DOI:10.3970/cmc.2009.014.185
Abstract Consideration is given to the resolution of dislocation density afforded by EBSD-based scanning electron microscopy. Comparison between the conventional Hough- and the emerging high-resolution cross-correlation-based approaches is made. It is illustrated that considerable care must be exercised in selecting a step size (Burger's circuit size) for experimental measurements. Important variables affecting this selection include the dislocation density and the physical size and density of dislocation dipole and multi-pole components of the structure. It is also illustrated that simulations can be useful to the interpretation of experimental recoveries. More >
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