O. Mekhbi^a, K. Kamli^b,*, Z. Hadef^b, O. Kamli^c, M. Bouatrous^d, N. Houaidji^e, L. Zighed^h

Chalcogenide Letters, Vol.22, No.4, pp. 331-339, 2025, DOI:10.15251/CL.2025.224.331

Abstract This work presents a hybrid study that employs Ultrasonic Spray method for the deposition of SnS absorber films and SCAPS-1D simulation method for the analysis of various solar cell topologies. Different deposition times have been employed to optimize structural, optics, and electrical properties. To evaluate their potential as absorber layers for solar cells, the films were analyzed by using X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and tested for electrical performance. Complementary numerical simulations were carried out with SCAPS-1D in modeling ZnO:Al/i-ZnO/SnS₂/SnS solar cell structures. Results showed that optimized SnS thickness of 2.5 µm and high carrier More >

M. H. Ibrahim^*, M. R. Salim, M. Y. Mohd Nor, A. S. Abdullah, A. I. Azmi

Chalcogenide Letters, Vol.22, No.6, pp. 551-560, 2025, DOI:10.15251/CL.2025.226.551

Abstract Four chalcogenide compounds: copper zinc germanium sulfide (CZGS), copper zinc germanium selenide (CZGSe), copper barium tin sulfide (CBTS), and copper manganese tin sulfide (CMTS) were proposed as hole transport layer (HTL) in dye-sensitized solar cell (DSSC). The DSSC structure comprises fluorine-doped tin oxide (FTO) as the top electrode, zinc oxysulfide (ZnOS) as the electron transport layer (ETL), N719 dye as the light absorber, chalcogenides as the HTL, and gold (Au) as the back electrode. By utilizing the SCAPS 1- D simulator, the optimal thicknesses for ZnOS, HTL candidates and N719 dye were determined to be More >

B. Yassine, B. Tahar^*, G. Fathi, B. Meriem, B. Ibtissem

Chalcogenide Letters, Vol.22, No.7, pp. 637-648, 2025, DOI:10.15251/CL.2025.227.637 - 17 December 2025

Abstract In this paper, we designed a two-junction (tandem) solar cell model (tandem solar cell), consisting of an top and bottom subcell with absorber layers of Cu₂SnZnS₄ (CZTS) and Cu₂SnZnSe₄ (CZTSe) materials, respectively, for each subcell with a ZnS buffer layer and a ZnO window layer. This model was validated using the SCAPS-1D numerical simulation program. We also optimized the performance of the tandem cell as a whole using the simulation by studying the effect of the thickness of the absorber layer of the top subcell and the thickness of the absorber layer of the bottom subcell More >

R. M. Reddy^a, S. Chirag^b, T. Anu^c, A. R. Venkataramanan^d, S. Karthikeyan^e,*, D. Palaniswamy^f, E. Venugopal Goud^a, N. Dineshbabu^g, T. Thirugnanasambandham^h

Chalcogenide Letters, Vol.22, No.7, pp. 615-624, 2025, DOI:10.15251/CL.2025.227.615

Abstract Solar cells can transform light energy into electrical energy, possibly removing the need for fossil fuel energy resources. Reflection loss in solar cells is a factor contributing to diminished power conversion efficiency, which can be solved through using antireflective coatings on the cell surface. The present research primarily focuses on the development and application of antireflection coatings on the top surface of silicon solar cells. Sb₂Se₃ was deposited over multi-crystalline Si cells with different durations from 15 to 60 minutes. The influence of thin film Sb₂Se₃ coated cells was investigated through optical, current, voltage and thermal… More >

M. Abbas^a, M. Haseeb-u-Rehman^a, M. Sohail^b, G. H. Tariq^a,*

Chalcogenide Letters, Vol.22, No.7, pp. 561-577, 2025, DOI:10.15251/CL.2025.227.561

Abstract This work presents the fabrication of NiO thin films via versatile sol-gel spin coating method and investigation of annealing effects on their physical properties. After the deposition process, the NiO thin films underwent annealing process at different values of temperatures ranging from 200°C to 350°C for one hour duration. XRD patterns confirmed the polycrystalline nature, along the preferred orientations (110) and (101) planes. Nanoparticles in NiO thin films demonstrated an increase in crystallite size with rising annealing temperatures, reaching a maximum size of 49 nm at annealing temperature 300°C. FTIR patterns revealed Ni-O bands at… More >

S. R. Ahmed^a,*, M. V. V. K. Srinivas Prasad^b, K. Keerthivasan^c

Chalcogenide Letters, Vol.22, No.8, pp. 679-691, 2025, DOI:10.15251/CL.2025.228.679

Abstract This work used a sonication-aided approach to make Cadmium sulfide nanoparticles and Nitrogen-doped CdS nanoparticles. Doping Nitrogen into CdS NPs enhances the material's electrical, chemical, and structural properties by altering its surface area and functional sites. XRD, FTIR, SEM/EDX, TGA, UV-Vis, and PSA are used to evaluate the characteristic features of CdS NPs. The photovoltaic responses of the prepared CdS and CdS-N NPs were evaluated by electrochemical impedance and IV analysis. The obtained XRD data confirms that nitrogen doping significantly changes the crystal size of CdS NPs. The XPS spectrum depicts the presence of trace More >

Y. B. K. Kumar^a,, S. G. Prasad^b, A. S. S. Smitha^c, S. M. Naidu^d, G. S. Babu^c, P. U. Bhaskar^e, U. Chalapathi^f,

Chalcogenide Letters, Vol.22, No.9, pp. 847-854, 2025, DOI:10.15251/CL.2025.229.847

Abstract Cu₂MgSnS₄ thin films have emerged as potential candidates for use in photovoltaic applications owing to their direct band gap properties. These quaternary compounds are fabricated through the spray pyrolysis method at 175 °C, utilizing two different carrier gases, such as air and nitrogen. After pyrolysis, deposited films are annealed at 450 °C for 1 hour. Structural analysis confirms the films exhibit a tetragonal kesterite structure. Using nitrogen as the carrier gas results in a larger crystallite size, accompanied by a reduction in both the dislocation density and microstrain. Raman spectroscopy further validates phase purity. Surface morphology analysis indicates More >

R. M. Reddy^a, J. A. Prakash^b, A. Tonk^c, S. Karvendhan^d, G. Sivaraman^e, D. K. Patel^f, S. P. Dillibabu^g, S. Karthikeyan^h,*, T. Thirugnanasambandhamⁱ

Chalcogenide Letters, Vol.22, No.9, pp. 797-806, 2025, DOI:10.15251/CL.2025.229.797

Abstract The current situation necessitates advancements in renewable energy as an alternative for conventional energy sources. Reflection loss in solar cells is a contributing factor to diminish the power conversion efficiency, which can be reduced by employing antireflective coatings. The current investigation focuses on improvement in photocurrent generation of monocrystalline silicon solar cells by employing Gallium sulfide (Ga_₂S₃) as anti-reflective coatings (ARC). The RF sputter coating method has been used for Ga_₂S₃ deposition at different coating durations (10, 20, 30, and 40 minutes). The transmittance, reflectance, I-V characteristics, electrical properties, and thermal behaviour of the Ga2S3 coatings… More >

R. K. Mishra^a,*, M. N. Anwar^a, M. A. Hasan^b

Chalcogenide Letters, Vol.22, No.10, pp. 871-882, 2025, DOI:10.15251/CL.2025.2210.871

Abstract This study introduces a novel approach to enhancing the performance of CdTe/IGZO-based heterojunction solar cells by utilizing IGZO as both a window layer and an electron transport layer (ETL). A comprehensive simulation using SCAPS-1D was conducted to evaluate the impact of various transparent conductive oxides (TCOs), including ITO, SnO_₂, ZnO, and FTO, on key photovoltaic parameters such as power conversion efficiency (PCE), open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF). The research also explores the critical role of transport layers (HTL/ETL) and their material properties, band alignment, carrier mobility, and defect density, in More >

T. M. Razykov¹, K. M. Kuchkarov¹, R. T. Yuldoshov¹, M. P. Pirimmatov¹, R. R. Khurramov¹, D. Z. Isakov¹, M. A. Makhmudov¹, A. Matmuratov¹, J. G. Bekmirzoyev¹, A. N. Olimov²

Chalcogenide Letters, Vol.22, No.11, pp. 959-964, 2025, DOI:10.15251/CL.2025.2211.959

Abstract This work presents the results of investigating the photovoltaic characteristics of Sb2(SxSe1−x)3 thin film solar cells manufactured on glass substrates with molybdenum coating using the chemical molecular beam deposition method. Illuminated IV and spectral response measurements on Sb₂(S_xSe_1−x)₃ alloy films show that the device with S/(S + Se) = 0.6 delivers the best performance, reaching 6.47% power-conversion efficiency with V_OC = 523 mV, J_SC = 27.2 mA cm⁻² , and a fill factor of 46.71%. More >