S. H. Liu^a, J. R. Yuan^a,*, Y. Wu^a, X. H. Deng^a, Q. M. Yu^b

Chalcogenide Letters, Vol.21, No.3, pp. 229-241, 2024, DOI:10.15251/CL.2024.213.229

Abstract Antimony selenide (Sb₂Se₃) has remarkable optoelectronic capabilities that make it a promising option for the next generation solar cells. In this work, a solar cell with the structure Al/FTO/CdS/Sb₂Se₃/Mo is modeled and numerically analyzed using SCAPS-1D program. Furthermore, a Al/FTO/CdS/Sb₂Se₃/Sb₂S₃/Mo solar cell structure that uses Sb₂S₃ as the back surface field (BSF) layer is proposed. A comprehensive examination of photovoltaic characteristics for the solar cells was carried out. The optimization process involved adjusting the operating temperature, series and shunt resistance, doping concentration, bulk defect density, back contact metal work function, and thickness of the absorber layer. The More >

A. Benmir^*, M. L. Louazene

Chalcogenide Letters, Vol.21, No.4, pp. 305-317, 2024, DOI:10.15251/CL.2024.214.305

Abstract This article deals with the optimization by simulation of a graded bandgap thin film solar cell based on antimony selenosulfide Sb₂(Se_1-yS_y)₃ having the following structure: Front contact/n-ZnO/i-ZnO/p-SbSSe/n-CdS/Back contact. The simulation is performed using SCAPS-1D software. The optimization process includes optimizing the bulk defect density, bandgap profile, material composition, thickness, and doping density of the absorber layer of thin film solar cell based on antimony selenosulfide Sb₂(Se_1-yS_y)₃. We found that for a bulk defect density below 10¹³ cm^-3 , using an absorber material with a graded bandgap profile leads to an efficiency of 25.33 % (For a bulk… More >

J. T. Jia^a,b, X. H. Yang^a,b,*, L. W. Wang^a,b

Chalcogenide Letters, Vol.21, No.7, pp. 543-556, 2024, DOI:10.15251/CL.2024.217.543

Abstract Chalcogenide perovskites are promising lead-free, stable absorber materials for solar cells. This work reports the synthesis of orthorhombic phase pure CaSnS₃ thin films by facile low temperature sulfurization of solution-processed CaSnO₃ oxide precursors. Structural characterization confirms complete anion exchange to produce crystalline CaSnS₃ films with vertically aligned rod-like grains. Optical studies show strong visible light absorption with direct bandgap of 1.72 eV, ideal for photovoltaics. Electrical measurements indicate p-type conductivity with hole concentration of 1.2×10¹⁷ cm^-3 and mobility around 8 cm2V-1s-1 at room temperature. First-principles DFT calculations corroborate the p-type electronic structure. Prototype CaSnS3 solar cells are fabricated More >

N. A. Jahan^*, S. I. Parash, Md. Asif Hossain, T. Chowdhury

Chalcogenide Letters, Vol.21, No.8, pp. 675-686, 2024, DOI:10.15251/CL.2024.218.675

Abstract In this study, the primary focus was on enhancing the performance of Photovoltaic devices by modifying the ETL and HTL transport layers. We conducted a comprehensive analysis of efficiency and fill factor variations resulting from adjustments in key device parameters, notably the active layer` thickness. The HTL layer employed materials such as CdTe (Cadmium telluride) and CISSe (Copper indium sulfur selenide), while the ETL layer utilized CdS (Cadmium sulfide), ZnO (Zinc oxide), SnOx (Stannous oxalte), SnO₂ (Tin oxide), and TiO₂ (Titanium dioxide). Additionally, Silicon (Si) was incorporated into our structure. Our highest efficiency recorded was 27.38%, More >

A. Skender^a, A. Aissat^a,b,c,*, J. P. Vilcot^c

Chalcogenide Letters, Vol.21, No.8, pp. 651-663, 2024, DOI:10.15251/CL.2024.218.651

Abstract The use of semiconductors based on abundant and less expensive materials in photovoltaic industry has grown since electricity consumption has increased, alloys such as Cu₂ZnSn(S_1-xSe_x)₄ have recently attracted attention, due to its structural, optical and electronic properties which make it a very promising candidate as an absorber layer in photovoltaic applications. The lattice mismatch of Cu₂ZnSn(S_1-xSe_x)₄ with Cu2NiGeS4 as substrate for solar cell architecture reveals that low Se content (0.1≤x≤0.4) is favorable, and thus, by reducing Se content from 40 to 10% induces a decrease in optical parameters such as refractive index from 5.475 to 3.834 More >

B. K. H. Al-Maiyaly, S. M. Ali, B. H. Hussein, H. K. Hassun^*

Chalcogenide Letters, Vol.21, No.8, pp. 605-613, 2024, DOI:10.15251/CL.2024.218.605

Abstract Copper doped Zinc oxide and (n-ZnO / p-Si and n-ZnO: Cu / p-Si) thin films thru thickness (400±20) nm were deposited by thermal evaporation technique onto two substrates. The influence of different Cu percentages (1%,3% and 5%) on ZnO thin film besides hetero junction (ZnO / Si) characteristics were investigated, with X-ray diffractions examination supports ZnO films were poly crystal then hexagonal structural per crystallite size increase from (22.34 to 28.09) nm with increasing Cu ratio. The optical properties display exceptional optically absorptive for 5% Cu dopant with reduced for optically gaps since 3.1 toward More >

Y. B. Kishore Kumar^a, S. Guru Prasad^b, A. S. Swapna Smitha^c, U. Chalapathi^d,*, G. Suresh Babu^c, Y. Jayasree^e, P. Uday Bhaskar^f, Si-Hyun Park^d

Chalcogenide Letters, Vol.21, No.9, pp. 719-727, 2024

Abstract This study explores the ternary compound semiconductor as a potential absorber layer for third-generation solar cells. CuSbS₂, a promising candidate for thin film absorber layers, is fabricated using a simple spray pyrolysis method. The research specifically investigates the influence of two different carrier gases during the fabrication process. X-ray diffraction as well as Raman studies confirm that the films exhibit a chalcostibite structure. Notably, films fabricated with nitrogen as the carrier gas demonstrate enhanced crystallinity, accompanied by reduced microstrain and dislocation density. Furthermore, these films exhibit a significantly improved absorption coefficient, reaching 10⁵ cm^-1 . Optical studies More >

H. K. Mahmood^*, B. H. Hussein

Chalcogenide Letters, Vol.21, No.9, pp. 687-694, 2024, DOI:10.15251/CL.2024.219.687

Abstract ZnIn₂(Se_1-xTe_x)₄ (ZIST) chalcopyrite semiconductor thin films at various contents (x = 0.0, 0.2, and 0.4) are deposited on glass and p type silicon (111) substrate to produce heterojunction solar cell by using the thermal evaporation technique at RT where the thickness of 500 nm with a vacuum of 1×10^-5 mbar and a deposited rates of 5.1 nm/s. This study focuses on how differing x content effect on the factors affecting the solar cell characteristics of ZIST thin film and n-ZIST/p-Si heterojunction. X-ray diffraction XRD investigation shows that this structure of ZIST film is polycrystalline and tetragonal,… More >

M. S. Tivanov^b,, T. M. Razykov^a, K. M. Kuchkarov^a,b,, A. N. Olimov^a, R. R. Khurramov^a, D. Z. Isakov^a, Z. A. Makhmudov^a, M. Pirimmetov^a, A. Nasirov^c, D. S. Bayko^b, O. V. Korolik^b

Chalcogenide Letters, Vol.21, No.10, pp. 819-828, 2024, DOI:10.15251/CL.2024.2110.819

Abstract Using the thermal evaporation method, thin crystalline films of Sb₂(S_xSe_1-x)₃ are produced at the substrate temperature of 300℃. The mixed powders of the Sb₂S₃ and Sb₂Se₃ is used as a source material. The influence of the S/Se component ratio on the morphology and structural characteristics of Sb₂(S_xSe_1-x)₃ thin films is investigated. As demonstrated by the results of X-ray energy dispersive spectroscopy, the formed films of Sb₂(S_xSe_1-x)₃ have a components ratio close to the stoichiometry. Besides, Morphological and structural analyses reveal significant differences in the surface morphology of Sb₂(S_xSe_1-x)₃ thin film absorbers, indicating that the properties of the films More >

Z. J. Kadhim^a, O. A. Hatem^b,*, D. M. Al Khafaf^c

Chalcogenide Letters, Vol.21, No.11, pp. 945-952, 2024, DOI:10.15251/CL.2024.2111.945

Abstract The synthesis and characterization of reduced graphene oxide/cadmium sulfide (rGO/CdS) are the primary topics covered in this paper. The construction of a photoanode in dyesensitized solar cells (DSSCs) using synthetic materials is subsequently proposed. Here, graphene oxide (GO) was synthesized using the Hummer's method, and green tea leaves were employed to reduce GO. The rGO/CdS nanocomposites were prepared using a hydrothermal method. A photoanode was fabricated from the as-prepared rGO/CdS nanocomposite paste using doctor blade deposition techniques.
The performance of the fabricated DSSCs was evaluated using current density-voltage (JV) curves. Transmission electron microscopy (TEM), X-ray… More >