Open Access

ARTICLE

Investigation of the functional capability of modified silicon-based photodiodes structure

Sh. B. Utamuradova^a, F. A. Giyasova^b, M. S. Paizullakhanov^c, S. Yu. Gerasimenko^d, M. A. Yuldoshev^e,g,*, S. R. Boydedayev^g, M. R. Bekchanova^h

a Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Uzbekistan
b Kimyo International University in Tashkent, Uzbekistan
c Institute of Materials Science of the Academy of Sciences of the Republic of Uzbekistan, Uzbekistan
d Physical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Uzbekistan
e Namangan State Pedagogical Institute, Uzbekistan g Namangan State Technical University, Uzbekistan
h University of Public Security of the Republic of Uzbekistan, Uzbekistan

* Corresponding Author:

Chalcogenide Letters 2025, 22(8), 753-764. https://doi.org/10.15251/CL.2025.228.753

Received 02 May 2025; Accepted 21 August 2025;

Abstract

Based on the experimental data, the results of the study of photoelectric and gain characteristics of modified multi-barrier photodiode Au-nCdS-nSi-pCdTe-Au structures are presented, which are obtained by the method of vacuum evaporation in a quasi-closed volume by sputtering cadmium sulfide and cadmium telluride layers on a silicon substrate with a specific resistance of 607.47 Ohm⋅cm. It is shown that the structures in the passing direction of the current at low illumination levels operate as injection photodiodes, and also the optical spectral range (0.3÷0.95 μm) covers from the nSi-pCdTe-Au side and (1.0÷1.4 μm) from the Au-nCdS-nSi side with a photosensitivity of 0.57 A/W at a wavelength of 1310 nm. In addition, the possibility of their application in optical power attenuation meters is considered.

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Keywords

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