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Semiconducting SWCNT Photo Detector for High Speed Switching Through Single Halo Doping

A. Arulmary1,*, V. Rajamani2, T. Kavitha2

1 Department of Information and Communication Engineering, Anna University, Chennai, 600025, Tamilnadu, India
2 Department of Electronics and Communication Engineering, VeltechMultitech Dr. RR Dr. SR Engineering College, Chennai-42, Tamilnadu, India

* Corresponding Author: A. Arulmary. Email: email

Computer Systems Science and Engineering 2023, 46(2), 1617-1630. https://doi.org/10.32604/csse.2023.034681

Abstract

The method opted for accuracy, and no existing studies are based on this method. A design and characteristic survey of a new small band gap semiconducting Single Wall Carbon Nano Tube (SWCNT) Field Effect Transistor as a photodetector is carried out. In the proposed device, better performance is achieved by increasing the diameter and introducing a new single halo (SH) doping in the channel length of the CNTFET device. This paper is a study and analysis of the performance of a Carbon Nano Tube Field Effect Transistor (CNTFET) as a photodetector using the self-consistent Poisson and Green function method. The 2D self-consistent Poisson and Green’s function method for various optical intensities and wavelength simulate this proposed photodetector. The performance study is based on the simulation of drain current, transconductance, sub-threshold swing, cut-off frequency, gain, directivity, and quantum efficiency under dark and illuminated conditions. These quantum simulation results show that cut-off frequency increases while there is an increase in diameter. The proposed SH-CNTFET provides better performance in terms of higher gain and directivity than conventional CNTFET (C-CNTFET). This device will be helpful in optoelectronic integrated circuits (OEIC) receivers due to its superior performance.

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APA Style
Arulmary, A., Rajamani, V., Kavitha, T. (2023). Semiconducting SWCNT photo detector for high speed switching through single halo doping. Computer Systems Science and Engineering, 46(2), 1617-1630. https://doi.org/10.32604/csse.2023.034681
Vancouver Style
Arulmary A, Rajamani V, Kavitha T. Semiconducting SWCNT photo detector for high speed switching through single halo doping. Comput Syst Sci Eng. 2023;46(2):1617-1630 https://doi.org/10.32604/csse.2023.034681
IEEE Style
A. Arulmary, V. Rajamani, and T. Kavitha "Semiconducting SWCNT Photo Detector for High Speed Switching Through Single Halo Doping," Comput. Syst. Sci. Eng., vol. 46, no. 2, pp. 1617-1630. 2023. https://doi.org/10.32604/csse.2023.034681



cc Copyright © 2023 The Author(s). Published by Tech Science Press.
This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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