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The Effect of Rotating Magnetic Fields on the Growth of SiGe Using the Traveling Solvent Method

T. J. Jaber1, M. Z. Saghir1

1 Department of Mechanical and Industrial Engineering, Ryerson University, 350 Victoria St., Toronto, ON, M5B 2K3

Fluid Dynamics & Materials Processing 2006, 2(3), 175-190.


The study deals with three-dimensional numerical simulations of fluid flow and heat transfer under the effect of a rotating magnetic field (RMF) during the growth of Ge0.98Si0.02 by the traveling solvent method (TSM). By using a RMF, an attempt is made to suppress buoyancy convection in the Ge0.98Si0.02 solution zone in order to get high quality and homogeneity with a flat growth interface. The full steady-state Navier-Stokes equations, as well as the energy, mass transport and continuity equations, are solved numerically using the finite element method. Different magnetic field intensities (B=2, 4, 10, 15 and 22 mT) for different rotational speeds (2, 7 and 10 rpm) under uniform and non-uniform heater profile conditions are considered. The results show that the RMF has a marked effect on the silicon concentration near the growth interface, changing the shape of the concentration profile from convex to nearly flat when the magnetic field intensity increases.


Cite This Article

Jaber, T. J., Saghir, M. Z. (2006). The Effect of Rotating Magnetic Fields on the Growth of SiGe Using the Traveling Solvent Method. FDMP-Fluid Dynamics & Materials Processing, 2(3), 175–190.

cc This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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