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The Effect of Rotating Magnetic Fields on the Growth of SiGe Using the Traveling Solvent Method

T. J. Jaber1, M. Z. Saghir1

1 Department of Mechanical and Industrial Engineering, Ryerson University, 350 Victoria St., Toronto, ON, M5B 2K3

Fluid Dynamics & Materials Processing 2006, 2(3), 175-190. https://doi.org/10.3970/fdmp.2006.002.175

Abstract

The study deals with three-dimensional numerical simulations of fluid flow and heat transfer under the effect of a rotating magnetic field (RMF) during the growth of Ge0.98Si0.02 by the traveling solvent method (TSM). By using a RMF, an attempt is made to suppress buoyancy convection in the Ge0.98Si0.02 solution zone in order to get high quality and homogeneity with a flat growth interface. The full steady-state Navier-Stokes equations, as well as the energy, mass transport and continuity equations, are solved numerically using the finite element method. Different magnetic field intensities (B=2, 4, 10, 15 and 22 mT) for different rotational speeds (2, 7 and 10 rpm) under uniform and non-uniform heater profile conditions are considered. The results show that the RMF has a marked effect on the silicon concentration near the growth interface, changing the shape of the concentration profile from convex to nearly flat when the magnetic field intensity increases.

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Cite This Article

Jaber, T. J., Saghir, M. Z. (2006). The Effect of Rotating Magnetic Fields on the Growth of SiGe Using the Traveling Solvent Method. FDMP-Fluid Dynamics & Materials Processing, 2(3), 175–190.



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