Morteza Eslamian1,2, M. Ziad Saghir1,3
FDMP-Fluid Dynamics & Materials Processing, Vol.8, No.4, pp. 353-380, 2012, DOI:10.3970/fdmp.2012.008.353
Abstract In this paper recent advances pertinent to the applications of thermodiffusion or thermomigration in the fabrication of micro and nano metal-doped semiconductor-based patterns and devices are reviewed and discussed. In thermomigration, a spot, line, or layer of a p-type dopant, such as aluminum, which is deposited on a semiconductor surface, penetrates into the semiconductor body due to the presence of a temperature gradient applied across the wafer body. The trails of p-doped regions within an n-type semiconductor, in the form of columns or walls, may be used for several applications, such as the isolation of a part of a semiconductor… More >
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