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Thermodiffusion Applications in MEMS, NEMS and Solar Cell Fabrication by Thermal Metal Doping of Semiconductors

Morteza Eslamian1,2, M. Ziad Saghir1,3
Department of Mechanical and Industrial Engineering, Ryerson University, Toronto, Ontario, Canada M5B 2K3
Present Address: Texas A&M University- Corpus Christi; Email: (M. Eslamian)
Email: (M. Z. Saghir)

Fluid Dynamics & Materials Processing 2012, 8(4), 353-380.


In this paper recent advances pertinent to the applications of thermodiffusion or thermomigration in the fabrication of micro and nano metal-doped semiconductor-based patterns and devices are reviewed and discussed. In thermomigration, a spot, line, or layer of a p-type dopant, such as aluminum, which is deposited on a semiconductor surface, penetrates into the semiconductor body due to the presence of a temperature gradient applied across the wafer body. The trails of p-doped regions within an n-type semiconductor, in the form of columns or walls, may be used for several applications, such as the isolation of a part of a semiconductor device, the formation of conductive channels within a silicon block, the fabrication of three-dimensional arrays for biological applications, manufacturing of solar cells, manipulation of material properties, and so on.


Thermomigration, Thermodiffusion, Soret effect, Semiconductor devices, Micro-electro-mechanical systems (MEMS), Nano-electro-mechanical systems (NEMS), Solar cells, P-n junctions, Three-dimensional arrays, Opto-electronic sensors

Cite This Article

Eslamian, M., Saghir, M. Z. (2012). Thermodiffusion Applications in MEMS, NEMS and Solar Cell Fabrication by Thermal Metal Doping of Semiconductors. FDMP-Fluid Dynamics & Materials Processing, 8(4), 353–380.

This work is licensed under a Creative Commons Attribution 4.0 International License , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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