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  • Open Access

    ARTICLE

    Investigation of temporal characteristics of photosensitive heterostructures based on gallium arsenide and silicon

    F. A. Giyasovaa, M. A. Yuldoshevb,d,*

    Chalcogenide Letters, Vol.22, No.2, pp. 123-129, 2025, DOI:10.15251/CL.2025.222.123

    Abstract The paper briefly describes the methodology for studying the temporal characteristics of near-IR photodiode structures under the influence of pulsed radiation from a semiconductor laser with a wavelength of 1100 and 1320 nm. The results of studying the response time of multilayer photosensitive Au-nCdS-nSi-pCdTe-Au and Au-nInP-nCdSνGaAs:O-Au structures with potential barriers are presented. It has been experimentally shown that the structures under study are not inferior in response time to known analogs based on gallium arsenide and silicon heterostructures, and can also be used in a wide optical range. More >

  • Open Access

    ARTICLE

    ZnO/ZnS sensor with broadband visible response for flexible polyethylene terephthalate substrates combined with artificial intelligence analysis

    X. Y. Chena,b, Y. H. Caia, Y. S. Chenc, S. J. Huangb, M. H. Lid, Y. H. Lie, C. H. Linc, H. Chena,*

    Chalcogenide Letters, Vol.22, No.9, pp. 777-785, 2025, DOI:10.15251/CL.2025.229.777

    Abstract This study focuses on the development of zinc oxide (ZnO)/zinc sulfide (ZnS) core-shell structures on flexible polyethylene terephthalate (PET) substrates for enhanced light sensing. PET offers high elasticity, optical transparency, and chemical resistance, making it ideal for wearable optoelectronics. By optimizing the vulcanization process, a uniform ZnS shell is formed on the exposed regions of ZnO nanorods (NRs), significantly enhancing ZnO-based sensor’s sensitivity to visible light, especially red light (peak wavelength at 630 nm). Structural and spectral analyses confirm the successful formation of the ZnO/ZnS heterostructure, improved charge separation, and broadened light response. To improve More >

  • Open Access

    ARTICLE

    Preparation and characterization of ZnO@MoS2 nanocomposites: investigating photoelectrical, electrocatalytic, and electrochemical behaviors

    J. M. Shi*, H. F. Zhang, H. C. Wang

    Chalcogenide Letters, Vol.21, No.3, pp. 263-274, 2024, DOI:10.15251/CL.2024.213.263

    Abstract This study presents the synthesis and characterization of 3D ZnO@MoS2 nanocomposites, demonstrating their superior performance in photoelectrochemical applications. Employing a combination of hydrothermal and solvothermal methods, the research focuses on creating heterostructures with optimized interfacial characteristics. The ZnO@MoS2 composites show a substantial increase in photocurrent density (1.02 mA/cm²), compared to ZnO nanorods (0.32 mA/cm²), underlining enhanced charge separation efficiency. In electrocatalytic hydrogen evolution, the heterostructures exhibit a lower onset potential (-175 mV vs RHE) and reduced Tafel slope (51 mV/dec), indicating improved catalytic activity over MoS2 nanosheets. Additionally, the composites demonstrate a significant increase in electrochemical capacitance (398 More >

  • Open Access

    PROCEEDINGS

    Deep-Potential Enabled Multiscale Simulation of Interfacial Thermal Transport in Boron Arsenide Heterostructures

    Jing Wu1, E Zhou1, An Huang1, Hongbin Zhang2, Ming Hu3, Guangzhao Qin1,*

    The International Conference on Computational & Experimental Engineering and Sciences, Vol.32, No.3, pp. 1-2, 2024, DOI:10.32604/icces.2024.012552

    Abstract High thermal conductivity substrate plays a significant role for efficient heat dissipation of electronic devices, and it is urgent to optimize the interfacial thermal resistance. As a novel material with ultra-high thermal conductivity second only to diamond, boron arsenide (BAs) shows promising applications in electronics cooling [1,2]. By adopting multi-scale simulation method driven by machine learning potential, we systematically study the thermal transport properties of boron arsenide, and further investigate the interfacial thermal transport in the GaN-BAs heterostructures. Ultrahigh interfacial thermal conductance of 260 MW m-2K-1 is achieved, which agrees well with experimental measurements, and the More >

  • Open Access

    PROCEEDINGS

    Nonlocal Crystal Plasticity Modeling of Heterostructured Materials

    Jianfeng Zhao1,*, Xu Zhang2, Guozheng Kang2, Michael Ziaser3

    The International Conference on Computational & Experimental Engineering and Sciences, Vol.31, No.4, pp. 1-1, 2024, DOI:10.32604/icces.2024.012582

    Abstract A continuum model of dislocation transport incorporating grain boundary transmission was developed within a dislocation-based crystal plasticity framework, which was then adopted to study the deformation mechanisms of gradient-structured material and bimodal-grained material. The nonlocal nature of the model on the slip system level enables the direct investigation of strain gradient effects caused by internal deformation heterogeneities. Furthermore, the interaction between dislocations and grain boundaries leads to the formation of pileups near grain boundaries, which is key to studying the grain size effects in polycrystals. Finite element implementation of the model for polycrystals with different… More >

  • Open Access

    ARTICLE

    Monolayer MoS2/n-Si Heterostructure Schottky Solar Cell

    Omar Salih Omar*

    Journal of Renewable Materials, Vol.10, No.7, pp. 1979-1988, 2022, DOI:10.32604/jrm.2022.018765 - 07 March 2022

    Abstract Monolayer MoS2 has a promising optoelectronics property, with a bandgap in the visible range; the material is a potential candidate for solar cell applications. In this work, we grew MoS2 monolayers using a low-pressure chemical vapor deposition approach. To produce uniform wafer-scale MoS2 monolayer films, precursors molybdenum dioxide (MoO2) and sulfur (S) are utilized. Atomic force microscopy was used to quantify the thickness of the monolayers, and the result was validated by Raman spectroscopy. Transmission electron microscopy (TEM) was used to confirm the crystalline quality of the monolayers, and photoluminescence spectroscopy was used to evaluate their optical More >

  • Open Access

    ARTICLE

    Mechanical Properties of All MoS2 Monolayer Heterostructures: Crack Propagation and Existing Notch Study

    Reza Khademi Zahedi1, Naif Alajlan2, Hooman Khademi Zahedi3, Timon Rabczuk2,*

    CMC-Computers, Materials & Continua, Vol.70, No.3, pp. 4635-4655, 2022, DOI:10.32604/cmc.2022.017682 - 11 October 2021

    Abstract The outstanding thermal, optical, electrical and mechanical properties of molybdenum disolphide (MoS2) heterostructures make them exceptional candidates for an extensive area of applications. Nevertheless, despite considerable technological and academic interest, there is presently a few information regarding the mechanical properties of these novel two-dimensional (2D) materials in the presence of the defects. In this manuscript, we performed extensive molecular dynamics simulations on pre-cracked and pre-notched all-molybdenum disolphide (MoS2) heterostructure systems using ReaxFF force field. Therefore, we study the influence of several central-crack lengths and notch diameters on the mechanical response of 2H phase, 1T phase and… More >

  • Open Access

    ARTICLE

    Physical Properties of SiC Nanostructure for Optoelectronics Applications

    Mayyadah H. Mohsin1, Najwan H. Numan2, Evan T. Salim1,*, Makram A. Fakhri2,*

    Journal of Renewable Materials, Vol.9, No.9, pp. 1519-1530, 2021, DOI:10.32604/jrm.2021.015465 - 23 April 2021

    Abstract A SiC nanofilms have been deposited and investigated on quartz and silicon substrates using pulsed laser deposition technique with the 300 pulses of Nd: YAG laser at two different laser wavelengths of 1064 nm and 532 nm. The structural, morphological, and optical properties of the deposited nanostructure SiC were prepared and characterized as a function of the wavelengths of the used laser. The structural result shows four different pecks at (111), (200), (220), and (311) planes related to Nano SiC. The transmission result presents that the optical energy gap value for the SiC nanostructure is More > Graphic Abstract

    Physical Properties of SiC Nanostructure for Optoelectronics Applications

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