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  • Open Access

    ARTICLE

    Low Temperature H2 Production from Formic Acid Aqueous Solution Catalyzed on Metal Doped Mo2C

    Shuaishuai Zhu1, Zhigang Pan1,2, Yaqiu Tao1,2,*, Yue Chen1,2

    Journal of Renewable Materials, Vol.8, No.8, pp. 939-946, 2020, DOI:10.32604/jrm.2020.011197

    Abstract Hydrogen is recognized as a promising energy scours in the close future. Online hydrogen preparation from formic acid under mild reaction conditions causes extensive interests. Mo2C and metal (Fe, Ni, Co, K) doped Mo2C on granular activated carbon (GAC) were prepared and used as heterogeneous catalysts for H2 generation from formic acid on a fixed bed reactor at 100–250°C. The formic acid conversions on doped Mo2C-Me/GAC are clearly improved, especially at lower reaction temperatures. Co doping presents outstanding effect on H2 selectivity and conversion rate compared to Ni and Fe. A 56.3% formic acid conversion was reached on Mo2C-Co/GAC at… More >

  • Open Access

    ARTICLE

    Thermodiffusion Applications in MEMS, NEMS and Solar Cell Fabrication by Thermal Metal Doping of Semiconductors

    Morteza Eslamian1,2, M. Ziad Saghir1,3

    FDMP-Fluid Dynamics & Materials Processing, Vol.8, No.4, pp. 353-380, 2012, DOI:10.3970/fdmp.2012.008.353

    Abstract In this paper recent advances pertinent to the applications of thermodiffusion or thermomigration in the fabrication of micro and nano metal-doped semiconductor-based patterns and devices are reviewed and discussed. In thermomigration, a spot, line, or layer of a p-type dopant, such as aluminum, which is deposited on a semiconductor surface, penetrates into the semiconductor body due to the presence of a temperature gradient applied across the wafer body. The trails of p-doped regions within an n-type semiconductor, in the form of columns or walls, may be used for several applications, such as the isolation of a part of a semiconductor… More >

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