Mallikarjun P. Y.¹, Rame Gowda D. N.¹, Trisha J. K.¹, Varshini M.¹, Poornesha S. Shetty¹, Mandar Jatkar^1,*, Arpan Shah²

CMC-Computers, Materials & Continua, Vol.86, No.3, 2026, DOI:10.32604/cmc.2025.072507 - 12 January 2026

Abstract As circuit feature sizes approach the nanoscale, traditional Copper (Cu) interconnects face significant hurdles posed by rising resistance-capacitance (RC) delay, electromigration, and high power dissipation. These limitations impose constraints on the scalability and reliability of future semiconductor technologies. Our paper describes the new Vertical multilayer Aluminium Boron Nitride Nanoribbon (AlBN) interconnect structure, integrated with Density functional theory (DFT) using first-principles calculations. This study explores AlBN-based nanostructures with doping of 1Cu, 2Cu, 1Fe (Iron), and 2Fe for the application of Very Large Scale Integration (VLSI) interconnects. The AlBN structure utilized the advantages of vertical multilayer interconnects… More >

G. Hao^*, Z. Chen, R. Xian, W. Yifan

Chalcogenide Letters, Vol.22, No.3, pp. 255-260, 2025, DOI:10.15251/CL.2025.223.255

Abstract In present work, Cu₂BaSnS₄(CBTS) nanoparticles are reported solvothermally synthesized. The formation of single-phase trigonal structure of CBTS nanoparticles is confirmed by XRD and Raman spectroscopic analysis. SEM studies reveal that CBTS exhibits flower shaped structure self-assembling by nanosheets with uniform average thickness 30nm. CBTS materials show abroad absorption in the complete visible range, providing a band-gap value of 1.58eV, indicating potential applications in photocvoltaics. The excellent MB degradation efficiency of 93% under visible light within 100min is achieved, suggesting CBTS is a potential material for effective solar light photocatalytic application. Meanwhile, electrical properties are measured up More >

S. Saleem^a, U. Parveen^a, H. AL-Ghamdi^b,*, M. Yaseen^a, I. Sajjad^a, Nasarullah^a

Chalcogenide Letters, Vol.22, No.3, pp. 223-237, 2025, DOI:10.15251/CL.2025.223.223

Abstract Present research reveals the doping effect on physical properties of Sr_1-xFe_xS by employing ab-initio calculations. The negative formation energy and optimization outcomes exhibit the stability of the Sr_1-xFe_xS alloys with ferromagnetic phase. Spin dependent band structure (BS) and density of states (DOS) interpret that Sr_1-xFe_xS revealed half metallic ferromagnetic (HMF) nature at 6.25% and 12.5% of Fe doping while metallic character is revealed at 25% concentration of dopant. Spin-up state of Sr_0.9375Fe_0.0625S and Sr_0.8750Fe_0.1250S depicts semiconductive behavior with bandgap value of 2.01/2.33 eV, correspondingly, while metallic in spin-down channel. The magnetism in the system is mainly originated because… More >

S. N. Garibova^a,b,*, А. I. Isayev^a, S. A. Rzayeva^a, F. N. Mammadov^c

Chalcogenide Letters, Vol.22, No.1, pp. 1-9, 2025, DOI:10.15251/CL.2025.221.1

Abstract The structure particulars of amorphous Ge2Sb2Te5 thermally evaporated on glass substrates, as well as films annealed at temperatures of 500 and 700 K have been studied by the considering of experimentally established facts obtained from X-ray analysis and Raman spectroscopy measurements. The Debye-Scherrer and Williams-Hall methods were applied to the X-ray diffraction data for estimate the size of crystallites, interatomic distances, dislocation density and structure distortion degree. The features of heat treatment effect on numerical values of the above quantities at a given temperatures have been established. The analysis of the spectral distribution of Raman… More >

F. Saker^a,*, L. Remache^a, D. Belfennache^b, K. R. Chebouki^a, R. Yekhlef^b

Chalcogenide Letters, Vol.22, No.2, pp. 151-166, 2025, DOI:10.15251/CL.2025.222.151

Abstract In this work the chemical bath deposition (CBD) method was used to synthesize Cadmium sulphide (CdS) thin films on glass, silicon (Si), and porous silicon (PSi) substrates. The PSi substrates were prepared by an electrochemical etching method using different current densities at constant etching time of 5 minutes. The CdS thin films were characterized using the X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), optical transmittance spectroscopy in the Uv visible range, and electrical characterization (I–V characteristics). The obtained results demonstrated that the morphology of the deposited materials was influenced by the… More >

A. W. Jabbar^a, N. K. Abbas^b,*

Chalcogenide Letters, Vol.22, No.8, pp. 735-752, 2025, DOI:10.15251/CL.2025.228.735

Abstract Nanostructured CdS and CdS: Cu thin films were synthesized by pulsed laser deposition with a Nd: YAG laser of different energies, 0.1, 0.5, and 1 W. The number of pulses was 300, and the frequency was 20 kHz. The CdS nanoparticles were deposited on a glass substrate. The optical, structural, and morphological properties were investigated utilized X-ray diffraction, UV-Vis spectrophotometry, and field emission scanning electron microscopy. From 2.25 to 2.1 eV, the results demonstrate that the band gap energy reduces as laser energy increases. Morphological investigations reveal that the laser energy has a significant impact More >

Xiaocui Li¹, Fu-Rong Chen^1,*, Yang Lu^2,*

The International Conference on Computational & Experimental Engineering and Sciences, Vol.33, No.1, pp. 1-1, 2025, DOI:10.32604/icces.2025.010503

Abstract Traditionally, it is relatively easy to process metal materials and polymers (plastics), while ceramic and inorganic semiconductor materials are hard to process, due to their intrinsic brittleness caused by directional covalent bonds or strong electrostatic interactions among ionic species. This brittleness can degrade semiconductor performance and lead to catastrophic failures, thereby limiting their application scenarios and service lifetime. Achieving room-temperature deformability in semiconductor materials without compromising their functionality has been a long-standing goal in materials science. Recently, room-temperature ductile semiconductors have emerged, with their deformability enhanced by factors such as size effects, fewer pre-existing micro-cracks,… More >

Yury V. Knyazev, Semyon T. Baidak, Yury I. Kuz’min, Alexey V. Lukoyanov^*

CMC-Computers, Materials & Continua, Vol.83, No.3, pp. 4085-4095, 2025, DOI:10.32604/cmc.2025.065091 - 19 May 2025

Abstract The work presents the electronic structure computations and optical spectroscopy studies of half-Heusler ScNiBi and YNiBi compounds. Our first-principles computations of the electronic structures were based on density functional theory accounting for spin-orbit coupling. These compounds are computed to be semiconductors. The calculated gap values make ScNiBi and YNiBi valid for thermoelectric and optoelectronic applications and as selective filters. In ScNiBi and YNiBi, an intense peak at the energy of −2 eV is composed of the Ni 3d states in the conduction band, and the valence band mostly contains these states with some contributions from the… More >

H. Guan^*, J. X. Xu, Z. Y. Yang, X. Y. Qian, M. Q. Zhao

Chalcogenide Letters, Vol.21, No.2, pp. 169-173, 2024, DOI:10.15251/CL.2024.212.169

Abstract Cu₂MgSnS₄ (CMTS) nanoparticles are successfully prepared via a solvothermal approach. X-ray diffraction (XRD) and Raman reveal that pure zinc-blende CMTS phase is obtained. Scanning electron microscopy (SEM) shows that CMTS nanoparticles exhibit microsphere structure. The band gap of as-obtained CMTS nanoparticles is calculated to be 1.68eV, indicating a potential candidate for tandem solar cells. The degradation rate of methylene blue (MB) with under visible-light irradiation is about 87%, indicating that CMTS can be useful for effective visible-light photocatalyst. More >

M. I. Ahamed^a,*, T. Ayyasamy^b, N. Prathap^a, S. Ahamed^c

Chalcogenide Letters, Vol.21, No.3, pp. 285-291, 2024, DOI:10.15251/CL.2024.214.285

Abstract In recent times, zero-dimensional materials have gained importance from a fundamental and technological perspective. Lead selenium sulphide (PbSeS) is a potential candidate for finding interest in its zero-dimensional form among many compound semiconductors. Hence, in this communication, we explored the impact of quantum confinement effects on the energy band gap and wavelength of PbSeS semiconductor nanocrystals (Quantum dots) using cohesive energy and hyperbolic band models (HBM). Experimental data, such as scanning electron microscopy, UV-Vis-NIR, and PL spectroscopies were used to determine the size of nanoparticles and wavelength. PbSeS nanocrystals were also prepared by one-pot synthesis. More >