C.J. Wordelman, N.R. Aluru, U. Ravaioli¹

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 121-126, 2000, DOI:10.3970/cmes.2000.001.121

Abstract This paper describes the application of the meshless Finite Point (FP) method to the solution of the nonlinear semiconductor Poisson equation. The FP method is a true meshless method which uses a weighted least-squares fit and point collocation. The nonlinearity of the semiconductor Poisson equation is treated by Newton-Raphson iteration, and sparse matrices are employed to store the shape function and coefficient matrices. Using examples in two- and three-dimensions (2- and 3-D) for a prototypical n-channel MOSFET, the FP method demonstrates promise both as a means of mesh enhancement and for treating problems where arbitrary point placement is advantageous, such… More >

S. Hamimid¹, A.Amroune¹

FDMP-Fluid Dynamics & Materials Processing, Vol.6, No.4, pp. 369-384, 2010, DOI:10.3970/fdmp.2010.006.369

Abstract The Navier-Stokes and energy equations are numerically solved to investigate two-dimensional convection (originating from the combined effect of buoyancy and surface tension forces) in a liquid metal subjected to transverse magnetic fields. In particular, a laterally heated horizontal cavity with aspect ratio (height/width) =1 and Pr=0.015 is considered (typically associated with the horizontal Bridgman crystal growth process and commonly used for benchmarking purposes). The effect of a uniform magnetic field with different magnitudes and orientations on the stability of the two distinct convective solution branches (with a single-cell or two-cell pattern) of the steady-state flows is investigated. The effects induced… More >

Morteza Eslamian^1,2, M. Ziad Saghir^1,3

FDMP-Fluid Dynamics & Materials Processing, Vol.8, No.4, pp. 353-380, 2012, DOI:10.3970/fdmp.2012.008.353

Abstract In this paper recent advances pertinent to the applications of thermodiffusion or thermomigration in the fabrication of micro and nano metal-doped semiconductor-based patterns and devices are reviewed and discussed. In thermomigration, a spot, line, or layer of a p-type dopant, such as aluminum, which is deposited on a semiconductor surface, penetrates into the semiconductor body due to the presence of a temperature gradient applied across the wafer body. The trails of p-doped regions within an n-type semiconductor, in the form of columns or walls, may be used for several applications, such as the isolation of a part of a semiconductor… More >

Aurora Costales¹, C. J. F. Solano², E. Francisco¹, A. Martín Pendás¹

CMC-Computers, Materials & Continua, Vol.38, No.2, pp. 105-128, 2013, DOI:10.3970/cmc.2013.038.105

Abstract An extension of our previously reported periodic cluster model (J. Phys. Chem. C 2008, 112, 6667-6676 ) to nanorings and nanobelts is presented. This new scheme allows for accurately calculating reasonably large nanostructures while preserving a very small number of optimization parameters. The model has been applied to a number of AlN semiconducting structures using ab initio pair potentials. Attention has been paid to the variation of the B1-B4 phase transition pressure as the the size of the structures is varied. More >

L.L. Zhu^1,2,3, X.J. Zheng^1,2

CMC-Computers, Materials & Continua, Vol.18, No.3, pp. 301-320, 2010, DOI:10.3970/cmc.2010.018.301

Abstract The phonon properties of spatially confined nanofilms under the preexisting stress fields are investigated theoretically by accounting for the confinement effects and acoustoelastic effects. Due to the spatial confinement in low-dimensional structures, the phonon dispersion relations, phonon group velocities as well as the phonon density of states are of significant difference with the ones in bulk structures. Here, the continuum elasticity theory is made use of to determine the phonon dispersion relations of shear modes (SH), dilatational modes (SA) and the flexural modes (AS), thus to analyze the contribution of stress fields on the phonon performance of confined nanofilms. Our… More >