Arka Das¹, Anthony Khoury¹, Eduardo Divo^{1, *}, Victor Huayamave¹, Andres Ceballos², Ron Eaglin², Alain Kassab³, Adam Payne⁴, Vijay Yelundur⁴, Hubert Seigneur⁵

CMES-Computer Modeling in Engineering & Sciences, Vol.122, No.3, pp. 757-777, 2020, DOI:10.32604/cmes.2020.08164

Abstract This paper presents a numerical reduced order model framework to simulate the physics of the thermomechanical processes that occur during c-Si photovoltaic (PV) cell fabrication. A response surface based on a radial basis function (RBF) interpolation network trained by a Proper Orthogonal Decomposition (POD) of the solution fields is developed for fast and accurate approximations of thermal loading conditions on PV cells during the fabrication processes. The outcome is a stand-alone computational tool that provides, in real time, the quantitative and qualitative thermomechanical response as a function of user-controlled input parameters for fabrication processes with the precision of 3D finite… More >

T. J. Jaber¹, M. Z. Saghir¹

FDMP-Fluid Dynamics & Materials Processing, Vol.2, No.3, pp. 175-190, 2006, DOI:10.3970/fdmp.2006.002.175

Abstract The study deals with three-dimensional numerical simulations of fluid flow and heat transfer under the effect of a rotating magnetic field (RMF) during the growth of Ge_0.98Si_0.02 by the traveling solvent method (TSM). By using a RMF, an attempt is made to suppress buoyancy convection in the Ge_0.98Si_0.02 solution zone in order to get high quality and homogeneity with a flat growth interface. The full steady-state Navier-Stokes equations, as well as the energy, mass transport and continuity equations, are solved numerically using the finite element method. Different magnetic field intensities (B=2, 4, 10, 15 and 22 mT) for different rotational… More >

Huang YC¹, H Chen¹, WJ Zhao², WD Li¹, HY Yang¹, Y Sun¹, L Wang¹, SH Cao¹

Phyton-International Journal of Experimental Botany, Vol.85, pp. 283-290, 2016, DOI:10.32604/phyton.2016.85.283

Abstract We conducted pot experiments on the cypress Thujopsis dolabrata (Linn. f.) Sieb. et Zucc. in order to study the interaction of silicon (Si) and root exudates on cadmium (Cd) bioavailability in the rhizosphere,. Each variety was planted with 100 mg/kg Cd and/or 400 mg/kg Si for 210 days. The results showed that adding Si increased Cd tolerance in T. dolabrata, but that the mechanism was specifical. In T. dolabrata, Si did not prevent Cd translocation from roots to shoots, and it significantly enhanced Cd accumulation without inhibiting growth. Moreover, Si mobilized Cd from the rhizospheric soil by stimulating phenolic exudation… More >

Koichi Kakimoto, Lijun Liu

FDMP-Fluid Dynamics & Materials Processing, Vol.2, No.3, pp. 167-174, 2006, DOI:10.3970/fdmp.2006.002.167

Abstract This paper deals with the investigation of the flow instability of molten silicon in a magnetic field during crystal growth by means of the Czochralski method. The flow exhibits a three-dimensional structure due to a transverse non-axisymmetric pattern of the magnetic field. The melt-crystal interface is found to be nearly two-dimensional. The azimuthal non-uniformity of the temperature field is much weaker on the crystal and crucible sidewalls in the case of high rotation rates of crucible and crystal than in the case of non-rotating crucible and crystal. More >

Youngmin Lee, Jae Shin Park, Seyoung Im

The International Conference on Computational & Experimental Engineering and Sciences, Vol.10, No.2, pp. 51-52, 2009, DOI:10.3970/icces.2009.010.051

Abstract We study energetics and mobility of dislocations in silicon crystal in atomistic scale. The electronic structure of silicon affects its dynamics, so that it is analyzed with tight-binding method for high accuracy, emerged as a useful method for studying structural and dynamical properties of covalent systems. The tight biding potential used for silicon crystalline is the one of GSP known as a transferable potential. Due to the nature of rare events, the analysis is executed by action-derived molecular dynamics (ADMD) calculations. The changes of the system energy due to dislocation glide are explored with a view to finding the Peierls… More >

R. Agalya¹, R. Muthaiah^2,*, D. Muralidharan³

CMES-Computer Modeling in Engineering & Sciences, Vol.120, No.1, pp. 25-43, 2019, DOI:10.32604/cmes.2019.05616

Abstract In today’s modern design technology, post-silicon validation is an expensive and composite task. The major challenge involved in this method is that it has limited observability and controllability of internal signals. There will be an issue during execution how to address the useful set of signals and store it in the on-chip trace buffer. The existing approaches are restricted to particular debug set-up where all the components have equivalent prominence at all the time. Practically, the verification engineers will emphasis only on useful functional regions or components. Due to some constraints like clock gating, some of the regions can be… More >

F. Mechighel^1,2,3, N. Armour⁴, S. Dost⁴, M. Kadja³

CMES-Computer Modeling in Engineering & Sciences, Vol.97, No.1, pp. 53-80, 2014, DOI:10.3970/cmes.2014.097.053

Abstract Numerical simulations were carried out to explain the behavior exhibited in experimental work on the dissolution process of silicon into a germanium melt. The experimental work utilized a material configuration similar to that used in the Liquid Phase Diffusion (LPD) and Melt-Replenishment Czochralski (Cz) growth systems. The experimental dissolution system was modeled by considering axisymmetric and three-dimensional (3-D) domains. In both cases, the governing equations, namely conservation of mass, momentum balance, energy balance, and solute transport balance, were solved using the Finite Element Method.
Measured concentration profiles and dissolution heights from the experiment samples showed that the application of a… More >

Tai-Ming Chang¹, Chien-Chou Weng¹, Mei-Jiau Huang^1,2, Chun-KaiLiu², Chih-Kuang Yu²

CMES-Computer Modeling in Engineering & Sciences, Vol.50, No.1, pp. 47-66, 2009, DOI:10.3970/cmes.2009.050.047

Abstract We employ the non-equilibrium molecular dynamics (NEMD) simulation to calculate the in-plane thermal conductivity of silicon thin films of thickness 2.2nm and 11nm. To eliminate the finite-size effect, samples of various lengths are simulated and an extrapolation technique is applied. To perform the quantum correction which is necessary as the MD simulation temperature is lower than Debye temperature, the confined phonon spectra are obtained in advance via the EMD simulations. The investigation shows the thermal conductivities corrected based on the bulk and thin-film phonon densities of states are very close and they agree excellently with the theoretical predictions of a… More >

Liming Xiong¹, Youping Chen¹

CMES-Computer Modeling in Engineering & Sciences, Vol.24, No.2&3, pp. 203-214, 2008, DOI:10.3970/cmes.2008.024.203

Abstract This paper presents the application of an atomistic field theory (AFT) in modeling and simulation of boron- , boron/nitrogen and silicon/nitrogen-doped nanocrystalline silicon carbide (B-, BN-, SiN-SiC). Intergranular glassy films (IGFs) and nano-sized pores have been obtained in triple junctions of the grains in nanocrystalline SiC (nc-SiC). Residual tensile stress in the SiC grains and compressive stress in the grain boundaries (GBs) are observed. Under uniaxial tension, the constitutive responses of nanocrystalline SiC were reproduced from the simulations. It is found that the mechanical properties of nanocrystalline SiC are strongly dependent on the compositions of GBs. Although there are more… More >

Selden B. Crary¹, Peter Cousseau², David Armstrong¹, David M. Woodcock³, Eva H. Mok¹, Olivier Dubochet⁴, Philippe Lerch⁴, Philippe Renaud²

CMES-Computer Modeling in Engineering & Sciences, Vol.1, No.1, pp. 127-140, 2000, DOI:10.3970/cmes.2000.001.127

Abstract We present a new and unique software capability for finding statistical optimal designs of deterministic experiments on continuous cuboidal regions. The objective function for the design optimization is the minimization of the expected integrated mean squared error of prediction of the metamodel that will be found, subsequent to the running of the computer simulations, using the best linear unbiased predictor (BLUP). The assumed response-model function includes an unknown, stochastic term, Z. We prove that this criterion, which we name I_Z-optimality, is equivalent to I-optimality for non-deterministic experiments, in the limit of zero correlations among the Z's for different inputs. An… More >