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  • Open Access

    ARTICLE

    The GGA-mBJ analysis of Ni modified SrS alloys for magnetic ordering and energy harvesting applications

    I. Sajjada, U. Parveen1, H. Al-Ghamdib,*, M. Yaseena, S. Saleema, Nasarullaha

    Chalcogenide Letters, Vol.22, No.9, pp. 829-845, 2025, DOI:10.15251/CL.2025.229.829

    Abstract Herein, we employed modified Becke-Johson (mBJ) potential based first principles method to investigate the structural, optoelectronic, and magnetic properties of pure SrS and Ni doped Sr1-xNixS alloys at varying doping concentrations. Formation enthalpy analysis predicts thermodynamical stability of resultant alloys. Geometry optimization was performed in order to optimize the super cells to obtain ground state energy state. After confirming their stability, we investigated their magnetic, electronic, and optical attributes. Pure SrS exhibits an indirect band gap of 3.53 eV (which is in good agreement with experiments), while nickel doping in SrS results in lowering the bandgap… More >

  • Open Access

    ARTICLE

    Comparative studies on pinhole free CBD-CdZnS thin films on ITO and FTO substrate

    S. Kumara, A. Alamb, K. P. Tiwaryc,*

    Chalcogenide Letters, Vol.21, No.7, pp. 567-574, 2024, DOI:10.15251/CL.2024.217.567

    Abstract The development of CdZnS thin films using the chemical bath deposition process in nonaqueous media is a technological challenge. In this work, 75 millilitres of ethylene glycol and ethanol (1:2 ratios) were used to develop a CdZnS thin film on ITO and FTO glass substrates using cadmium acetate, zinc sulphate, and thiourea. The ideal bath temperature was kept at 130℃ and the anneal temperature of the film that had been deposited in the air was maintained at 350℃. The films have been examined using FTIR, WCA, FESEM, and XRD. XRD studies reveal that CdZnS films… More >

  • Open Access

    ARTICLE

    Improvement and optimization of Cu2ZnSn(S1-xSex)4 structure for optoelectronic applications

    A. Skendera, A. Aissata,b,c,*, J. P. Vilcotc

    Chalcogenide Letters, Vol.21, No.8, pp. 651-663, 2024, DOI:10.15251/CL.2024.218.651

    Abstract The use of semiconductors based on abundant and less expensive materials in photovoltaic industry has grown since electricity consumption has increased, alloys such as Cu2ZnSn(S1-xSex)4 have recently attracted attention, due to its structural, optical and electronic properties which make it a very promising candidate as an absorber layer in photovoltaic applications. The lattice mismatch of Cu2ZnSn(S1-xSex)4 with Cu2NiGeS4 as substrate for solar cell architecture reveals that low Se content (0.1≤x≤0.4) is favorable, and thus, by reducing Se content from 40 to 10% induces a decrease in optical parameters such as refractive index from 5.475 to 3.834 More >

  • Open Access

    ARTICLE

    A first-principles investigation of Ba2CaTeO6 and Ba2CaWO6 compounds for thermoelectric and optoelectronic applications

    M. Ishfaqa, A. Aziza, S. A. Aldaghfagb, S. Noreenc, M. Zahidc, M. Yaseena,*

    Chalcogenide Letters, Vol.21, No.8, pp. 615-629, 2024, DOI:10.15251/CL.2024.218.615

    Abstract Herein, structural, optoelectronic, and thermoelectric characteristics of Ba2CaTeO6 and Ba2CaWO6 oxides double perovskite have been evaluated by first-principles calculations. Enthalpy of formation and tolerance factor are computed to ensure the respective structural and thermodynamical stability. Ba2CaTeO6 and Ba2CaWO6 have mBJ computed bandgaps of 5.87 eV and 4.20 eV, respectively. Furthermore, the optical parameters like dielectric constants (ԑ1(ω) & ԑ2(ω)) and other related parameters are computed. The thermoelectric (TE) parameters were examined using the BoltzTraP package. The ZT values of Ba2Ca(Te/W)O6 at 450 K are 0.76/0.79, respectively. The outcomes of the Ba2CaTeO6 and Ba2CaWO6 double perovskite show that these materials are More >

  • Open Access

    PROCEEDINGS

    Raman Spectroscopy and Modeling and Simulation of Quantum Dots and Nanomaterials for Optoelectronic and Sensing Applications

    Prabhakar Misra1,*, Hawazin Alghamdi1, Raul Garcia-Sanchez1, Wyatt Mitchell2, Allison Powell3, Nikhil Vohra4

    The International Conference on Computational & Experimental Engineering and Sciences, Vol.31, No.4, pp. 1-1, 2024, DOI:10.32604/icces.2024.013296

    Abstract Semiconducting quantum dots (Q-dots) with strain-tunable electronic properties are good contenders for quantum computing devices, as they hold promise to exhibit a high level of photon entanglement. The optical and electronic properties of Q-dots vary with their size, shape, and makeup. An assortment of Q-dots has been studied, including ZnO, ZnS, CdSe and perovskites [1]. We have employed both Raman spectroscopy (to precisely determine their vibrational frequencies) and UV-VIS spectroscopy (to determine accurately their band gap energies). The electronic band structure and density of states of the ZnO and ZnS Q-dots have been investigated under More >

  • Open Access

    ARTICLE

    Optical Neural Networks: Analysis and Prospects for 5G Applications

    Doaa Sami Khafaga1, Zongming Lv2, Imran Khan3,4, Shebnam M. Sefat5, Amel Ali Alhussan1,*

    CMC-Computers, Materials & Continua, Vol.77, No.3, pp. 3723-3740, 2023, DOI:10.32604/cmc.2023.039956 - 26 December 2023

    Abstract With the capacities of self-learning, acquainted capacities, high-speed looking for ideal arrangements, solid nonlinear fitting, and mapping self-assertively complex nonlinear relations, neural systems have made incredible advances and accomplished broad application over the final half-century. As one of the foremost conspicuous methods for fake insights, neural systems are growing toward high computational speed and moo control utilization. Due to the inborn impediments of electronic gadgets, it may be troublesome for electronic-implemented neural systems to make the strides these two exhibitions encourage. Optical neural systems can combine optoelectronic procedures and neural organization models to provide ways… More >

  • Open Access

    ARTICLE

    Pulse Laser Deposition of HfO2 Nanoporous-Like Structure, Physical Properties for Device Fabrication

    Shams B. Ali1, Sarmad Fawzi Hamza Alhasan1, Evan T. Salim2,*, Forat H. Alsultany3, Omar S. Dahham4,5

    Journal of Renewable Materials, Vol.10, No.11, pp. 2819-2834, 2022, DOI:10.32604/jrm.2022.021609 - 29 June 2022

    Abstract The pulsed laser deposition (PLD) technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for (HfO2) nanofilms. In many optoelectronics devices and their applications, the presence of a high dielectric substance like a nano HfO2, between the metal contacts and the substrates was critical. We used the Pulsed Laser Deposition method to fabricate an Al/HfO2/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate temperatures. The optical result reveals a high degree of transparency (93%). The optical bandgap of deposited HfO2 films was observed… More >

  • Open Access

    ARTICLE

    Physical Properties of SiC Nanostructure for Optoelectronics Applications

    Mayyadah H. Mohsin1, Najwan H. Numan2, Evan T. Salim1,*, Makram A. Fakhri2,*

    Journal of Renewable Materials, Vol.9, No.9, pp. 1519-1530, 2021, DOI:10.32604/jrm.2021.015465 - 23 April 2021

    Abstract A SiC nanofilms have been deposited and investigated on quartz and silicon substrates using pulsed laser deposition technique with the 300 pulses of Nd: YAG laser at two different laser wavelengths of 1064 nm and 532 nm. The structural, morphological, and optical properties of the deposited nanostructure SiC were prepared and characterized as a function of the wavelengths of the used laser. The structural result shows four different pecks at (111), (200), (220), and (311) planes related to Nano SiC. The transmission result presents that the optical energy gap value for the SiC nanostructure is More > Graphic Abstract

    Physical Properties of SiC Nanostructure for Optoelectronics Applications

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