Haneen D. Jabbar^1,*, Makram A. Fakhri^1,*, Mohammed Jalal Abdul Razzaq¹, Omar S. Dahham^2,3, Evan T. Salim⁴, Forat H. Alsultany⁵, U. Hashim⁶

Journal of Renewable Materials, Vol.11, No.3, pp. 1101-1122, 2023, DOI:10.32604/jrm.2023.023698

Abstract Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5–15 min at 2.5 min intervals. X-ray diffraction, room-temperature photoluminescence, atomic force microscopy and field emission scanning electron microscopy images, and electrical characteristics in the prepared GaN on the Psi film were investigated. The optimum Psi substrate was obtained under the following conditions: 10 min, 10 mA/cm², and 24% hydrofluoric acid. The substrate exhibited two highly cubic crystalline structures at (200)… More >

Shahzaib Anwar¹, Sardar Muhammad Gulfam^1,*, Bilal Muhammad², Syed Junaid Nawaz¹, Khursheed Aurangzeb³, Mohammad Kaleem¹

CMC-Computers, Materials & Continua, Vol.69, No.1, pp. 1021-1037, 2021, DOI:10.32604/cmc.2021.018248

Abstract High electron mobility transistor (HEMT) based on gallium nitride (GaN) is one of the most promising candidates for the future generation of high frequencies and high-power electronic applications. This research work aims at designing and characterization of enhancement-mode or normally-off GaN HEMT. The impact of variations in gate length, mole concentration, barrier variations and other important design parameters on the performance of normally-off GaN HEMT is thoroughly investigated. An increase in the gate length causes a decrease in the drain current and transconductance, while an increase in drain current and transconductance can be achieved by increasing the concentration of aluminium… More >