S. I. Aziz, G. G. Ali^*

Chalcogenide Letters, Vol.22, No.3, pp. 239-253, 2025, DOI:10.15251/CL.2025.223.239

Abstract This work investigates the photodetector characteristics of lead and cadmium sulfide thin films deposited on porous silicon heterojunction at composites (x=0,0.25,0.5,0.75,1). The characteristics of all deposited samples were estimated by X-ray diffraction (XRD), highresolution scanning electron microscope (FESEM), Energy-dispersive X-ray (EDX), I-V measurements, and photodetector properties. PbS and CdS thin films have been successful, and photodetector properties on the porous silicon surface have performed well using the chemical spray method. An X-ray confirmed that the prepared samples have a crystalline phase structure. Besides, the results indicate that the PbS and CdS thin films have cubic… More >

H. K. Hassun^a,*, B. H. Hussein^a, B. K. H. Al-Maiyaly^a, R. H. Athab^a, Y. K. H. Moussa^b

Chalcogenide Letters, Vol.22, No.6, pp. 541-550, 2025, DOI:10.15251/CL.2025.226.541

Abstract Photoconductive possessions through the highly sensitive and responsive in lower applications apply voltages with a charge that effect the product for the photodetector utilizing Copper Sulfide was effective to fabricate and deposit by the means of thermal evaporation techniques following by the heat treatment with applications as the visible photodetector was described. Effects of doping to the antimony and aluminum on photo detectors property were estimated to be below illumination by the utilization of different power densities. The structure with the surface morphology properties was studied by XRD and AFM techniques, a clear effect of More >

Sh. B. Utamuradova^a, F. A. Giyasova^b, M. S. Paizullakhanov^c, S. Yu. Gerasimenko^d, M. A. Yuldoshev^e,g,*, S. R. Boydedayev^g, M. R. Bekchanova^h

Chalcogenide Letters, Vol.22, No.8, pp. 753-764, 2025, DOI:10.15251/CL.2025.228.753

Abstract Based on the experimental data, the results of the study of photoelectric and gain characteristics of modified multi-barrier photodiode Au-nCdS-nSi-pCdTe-Au structures are presented, which are obtained by the method of vacuum evaporation in a quasi-closed volume by sputtering cadmium sulfide and cadmium telluride layers on a silicon substrate with a specific resistance of 607.47 Ohm⋅cm. It is shown that the structures in the passing direction of the current at low illumination levels operate as injection photodiodes, and also the optical spectral range (0.3÷0.95 μm) covers from the nSi-pCdTe-Au side and (1.0÷1.4 μm) from the Au-nCdS-nSi More >

C. M. Fu^a, M. Z. Ge^b, X. Q. Zhang^c, W. Yan^c,*

Chalcogenide Letters, Vol.22, No.8, pp. 665-677, 2025, DOI:10.15251/CL.2025.228.665

Abstract Constructing heterojunctions represents a crucial strategy for enhancing semiconductor photocatalysts. In this study, the C-MoO₂/Cd_0.9Zn_0.1S S-scheme heterojunction composite was successfully fabricated through a self-assembly approach. XPS analysis confirmed the spontaneous transfer of intrinsic electrons from Cd_0.9Zn_0.1S to C-MoO₂ in the dark, establishing an internal electric field at the C-MoO2/Cd_0.9Zn_0.1S interface. Under visible light irradiation, the C-MoO₂/Cd_0.9Zn_0.1S composite exhibited significantly enhanced hydrogen evolution activity, achieving a 6.3-fold improvement compared to pristine Cd_0.9Zn_0.1S. PL, TRPL, and electrochemical measurements collectively demonstrated that the incorporation of C-MoO₂ effectively suppressed the recombination of photogenerated electrons in Cd_0.9Zn_0.1S. The outstanding photocatalytic performance and improved charge More >

R. K. Mishra^a,*, M. N. Anwar^a, M. A. Hasan^b

Chalcogenide Letters, Vol.22, No.10, pp. 871-882, 2025, DOI:10.15251/CL.2025.2210.871

Abstract This study introduces a novel approach to enhancing the performance of CdTe/IGZO-based heterojunction solar cells by utilizing IGZO as both a window layer and an electron transport layer (ETL). A comprehensive simulation using SCAPS-1D was conducted to evaluate the impact of various transparent conductive oxides (TCOs), including ITO, SnO_₂, ZnO, and FTO, on key photovoltaic parameters such as power conversion efficiency (PCE), open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF). The research also explores the critical role of transport layers (HTL/ETL) and their material properties, band alignment, carrier mobility, and defect density, in More >

A. A. Ahmed^a, G. G. Ali^b,*, N. A. Daham^a

Chalcogenide Letters, Vol.21, No.1, pp. 81-97, 2024, DOI:10.15251/CL.2024.211.81

Abstract In this work, copper sulfide (CuS) nanostructure was deposited on a porous silicon wafer for the visible light by spray pyrolysis method. Through this, a series of devices were suggested as a part of the deposit concentration of CuS on n-type porous silicon. Simultaneously, the physical features of the attained film were illustrated. FESEM exhibited that the average nanoparticle diameter increased with the concentration of CuS at orientation (100) and was found to be 47.84 nm, 56.36nm and 71.32nm, while the average diameter at (111) orientation was found to be 37.64 nm, 41.46nm, 55.22 nm… More >

F. B. ohammed Ameen^a, M. H. Younus^b, G. G. Ali^c,*

Chalcogenide Letters, Vol.21, No.4, pp. 343-354, 2024, DOI:10.15251/CL.2024.214.343

Abstract In this work, the gas sensing properties of ZnS/Porous silicon heterostructures have been investigated. . Zinc sulfide(ZnS) with high gas sensing performance is successfully synthesized over the Porous silicon substrate by the spray pyrolysis method. The properties of the as-prepared samples were characterized X-ray diffraction (XRD), scanning electron microscope (SEM), Fourier transform spectrum (FTIR) and optical properties. The results reveal that the properties of the ZnS/Porous silicon heterostructures enhanced when the when the ZnS concentration is increased. The performance ZnS/Porous silicon as a gas-sensing show that the maximum sensitivity is found to be 5.11 at More >

X. Y. Gao^*, P. Lu, Z. M. Xu, G. G. Tang

Chalcogenide Letters, Vol.21, No.5, pp. 395-405, 2024, DOI:10.15251/CL.2024.215.395

Abstract g-C₃N₄ has a strong C-N covalent bond within the monolayer and a weak van der Waals force between the lamels, which enables it to have similar lubrication properties to other two-dimensional layered materials. In this study, a new type of g-C₃N₄/MoS₂/ZnS heterogeneous nanocomposites was prepared by a one-step hydrothermal method XRD, SEM, FI-IR, and other methods were used to systematically study it. Furthermore, a ball-on-disk tribometer extensively examined the tribological behavior of g-C₃N₄/MoS₂/ZnS heterojunction in pure oil. The relationship between applied load and rotational speed on performance is also revealed. Compared with g-C₃N₄ and g-C₃N₄/MoS₂ nanocomposites, g-C₃N₄/MoS₂/ZnS has More >

N. A. Jahan^*, S. I. Parash, Md. Asif Hossain, T. Chowdhury

Chalcogenide Letters, Vol.21, No.8, pp. 675-686, 2024, DOI:10.15251/CL.2024.218.675

Abstract In this study, the primary focus was on enhancing the performance of Photovoltaic devices by modifying the ETL and HTL transport layers. We conducted a comprehensive analysis of efficiency and fill factor variations resulting from adjustments in key device parameters, notably the active layer` thickness. The HTL layer employed materials such as CdTe (Cadmium telluride) and CISSe (Copper indium sulfur selenide), while the ETL layer utilized CdS (Cadmium sulfide), ZnO (Zinc oxide), SnOx (Stannous oxalte), SnO₂ (Tin oxide), and TiO₂ (Titanium dioxide). Additionally, Silicon (Si) was incorporated into our structure. Our highest efficiency recorded was 27.38%, More >

H. K. Mahmood^*, B. H. Hussein

Chalcogenide Letters, Vol.21, No.9, pp. 687-694, 2024, DOI:10.15251/CL.2024.219.687

Abstract ZnIn₂(Se_1-xTe_x)₄ (ZIST) chalcopyrite semiconductor thin films at various contents (x = 0.0, 0.2, and 0.4) are deposited on glass and p type silicon (111) substrate to produce heterojunction solar cell by using the thermal evaporation technique at RT where the thickness of 500 nm with a vacuum of 1×10^-5 mbar and a deposited rates of 5.1 nm/s. This study focuses on how differing x content effect on the factors affecting the solar cell characteristics of ZIST thin film and n-ZIST/p-Si heterojunction. X-ray diffraction XRD investigation shows that this structure of ZIST film is polycrystalline and tetragonal,… More >