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  • Open Access


    Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

    Haneen D. Jabbar1,*, Makram A. Fakhri1,*, Mohammed Jalal Abdul Razzaq1, Omar S. Dahham2,3, Evan T. Salim4, Forat H. Alsultany5, U. Hashim6

    Journal of Renewable Materials, Vol.11, No.3, pp. 1101-1122, 2023, DOI:10.32604/jrm.2023.023698

    Abstract Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5–15 min at 2.5 min intervals. X-ray diffraction, room-temperature photoluminescence, atomic force microscopy and field emission scanning electron microscopy images, and electrical characteristics in the prepared GaN on the Psi film were investigated. The optimum Psi substrate was obtained under the following conditions: 10 min, 10 mA/cm2, and 24% hydrofluoric acid. The substrate exhibited two highly cubic crystalline structures at (200)… More >

  • Open Access


    Pulse Laser Deposition of HfO2 Nanoporous-Like Structure, Physical Properties for Device Fabrication

    Shams B. Ali1, Sarmad Fawzi Hamza Alhasan1, Evan T. Salim2,*, Forat H. Alsultany3, Omar S. Dahham4,5

    Journal of Renewable Materials, Vol.10, No.11, pp. 2819-2834, 2022, DOI:10.32604/jrm.2022.021609

    Abstract The pulsed laser deposition (PLD) technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for (HfO2) nanofilms. In many optoelectronics devices and their applications, the presence of a high dielectric substance like a nano HfO2, between the metal contacts and the substrates was critical. We used the Pulsed Laser Deposition method to fabricate an Al/HfO2/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate temperatures. The optical result reveals a high degree of transparency (93%). The optical bandgap of deposited HfO2 films was observed to vary… More >

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