Haneen D. Jabbar^1,*, Makram A. Fakhri^1,*, Mohammed Jalal Abdul Razzaq¹, Omar S. Dahham^2,3, Evan T. Salim⁴, Forat H. Alsultany⁵, U. Hashim⁶

Journal of Renewable Materials, Vol.11, No.3, pp. 1101-1122, 2023, DOI:10.32604/jrm.2023.023698

Abstract Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5–15 min at 2.5 min intervals. X-ray diffraction, room-temperature photoluminescence, atomic force microscopy and field emission scanning electron microscopy images, and electrical characteristics in the prepared GaN on the Psi film were investigated. The optimum Psi substrate was obtained under the following conditions: 10 min, 10 mA/cm², and 24% hydrofluoric acid. The substrate exhibited two highly cubic crystalline structures at (200)… More >

Shams B. Ali¹, Sarmad Fawzi Hamza Alhasan¹, Evan T. Salim^2,*, Forat H. Alsultany³, Omar S. Dahham^4,5

Journal of Renewable Materials, Vol.10, No.11, pp. 2819-2834, 2022, DOI:10.32604/jrm.2022.021609

Abstract The pulsed laser deposition (PLD) technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for (HfO₂) nanofilms. In many optoelectronics devices and their applications, the presence of a high dielectric substance like a nano HfO₂, between the metal contacts and the substrates was critical. We used the Pulsed Laser Deposition method to fabricate an Al/HfO₂/p-Si Schottky barrier diode where the nanostructured HfO₂ films as an intermediate layer and varied substrate temperatures. The optical result reveals a high degree of transparency (93%). The optical bandgap of deposited HfO₂ films was observed to vary… More >