Hameed H. Ahmed¹, Thaer A. Mezher^2,*, Marwan R. Rashid³

Chalcogenide Letters, Vol.22, No.12, pp. 1055-1066, 2025, DOI:10.15251/CL.2025.2212.1055 - 10 December 2025

Abstract Laser ablation in liquids (LAL), a hygienic and effective method for creating high-purity nanomaterials, was used in this study to create cadmium sulfide (CdS) and silver oxide (Ag₂O) nanoparticles. The sputtering process was used to deposit the produced nanomaterials on porous silicon (PSi) substrates, and a number of assays were used to examine the samples’ structural, optical, and electrical characteristics. The CdS sample had a hexagonal crystal structure, according to X-ray diffraction (XRD) data, whereas the AgO sample had a cubic structure. The diameters of the nanoparticles in the two samples ranged from 22.64 nm for… More >

Naeemah A. Aswad, Ayed N. Saleh^*

Chalcogenide Letters, Vol.22, No.12, pp. 1019-1029, 2025, DOI:10.15251/CL.2025.2212.1019 - 06 December 2025

Abstract The SCAPS-1D software was used to simulate a p–CuI/n–InSe photodetector at 300 K with AM1.5G light. The simulation results showed that, with a quantum efficiency of 97.6% at 800 nm and a responsivity of 0.67 A/W, the ideal absorber layer thickness of 0.8 µm produced the highest overall performance. The specific detectivity was enhanced to 2.5 × 10¹⁵ cm·Hz^1/2 ·W⁻³ and the dark current was decreased by increasing the InSe carrier concentration from 1 × 10¹⁵ cm⁻³ to 3 × 10¹⁵ cm⁻³ . These findings show that the CuI/InSe heterojunction’s broadband response, strong responsivity, and low dark current make More >

S. I. Aziz, G. G. Ali^*

Chalcogenide Letters, Vol.22, No.3, pp. 239-253, 2025, DOI:10.15251/CL.2025.223.239

Abstract This work investigates the photodetector characteristics of lead and cadmium sulfide thin films deposited on porous silicon heterojunction at composites (x=0,0.25,0.5,0.75,1). The characteristics of all deposited samples were estimated by X-ray diffraction (XRD), highresolution scanning electron microscope (FESEM), Energy-dispersive X-ray (EDX), I-V measurements, and photodetector properties. PbS and CdS thin films have been successful, and photodetector properties on the porous silicon surface have performed well using the chemical spray method. An X-ray confirmed that the prepared samples have a crystalline phase structure. Besides, the results indicate that the PbS and CdS thin films have cubic… More >

H. K. Hassun^a,*, B. H. Hussein^a, B. K. H. Al-Maiyaly^a, R. H. Athab^a, Y. K. H. Moussa^b

Chalcogenide Letters, Vol.22, No.6, pp. 541-550, 2025, DOI:10.15251/CL.2025.226.541

Abstract Photoconductive possessions through the highly sensitive and responsive in lower applications apply voltages with a charge that effect the product for the photodetector utilizing Copper Sulfide was effective to fabricate and deposit by the means of thermal evaporation techniques following by the heat treatment with applications as the visible photodetector was described. Effects of doping to the antimony and aluminum on photo detectors property were estimated to be below illumination by the utilization of different power densities. The structure with the surface morphology properties was studied by XRD and AFM techniques, a clear effect of More >

A. A. Ahmed^a, G. G. Ali^b,*, N. A. Daham^a

Chalcogenide Letters, Vol.21, No.1, pp. 81-97, 2024, DOI:10.15251/CL.2024.211.81

Abstract In this work, copper sulfide (CuS) nanostructure was deposited on a porous silicon wafer for the visible light by spray pyrolysis method. Through this, a series of devices were suggested as a part of the deposit concentration of CuS on n-type porous silicon. Simultaneously, the physical features of the attained film were illustrated. FESEM exhibited that the average nanoparticle diameter increased with the concentration of CuS at orientation (100) and was found to be 47.84 nm, 56.36nm and 71.32nm, while the average diameter at (111) orientation was found to be 37.64 nm, 41.46nm, 55.22 nm… More >

H. R. Hassan, A. N. Abd^*, M. J. M. Ali

Chalcogenide Letters, Vol.21, No.11, pp. 855-866, 2024, DOI:10.15251/CL.2024.2111.855

Abstract Using a laser energy of no more than 600 mJ/pulse and a maximum of 500 pulses, this work selectively produced pure copper, indium, gallium, and selenide (CIGS) NPs using a laser ablation method with distilled water and n-type porous silicon prepared by the photoelectron etching method. The material exhibits quantum dot behavior, according to experimental investigations. Porous silicone bases were produced using a current density of 10 mA/cm2 and an etching time of 15 min. Tests XRD, SEM, AFM, FTIR, UV, PL were conducted for the porous silicone and CIGS NPs to ensure that each More >

Bori Shi¹, Jinbo Wu^1,2,*

The International Conference on Computational & Experimental Engineering and Sciences, Vol.29, No.1, pp. 1-1, 2024, DOI:10.32604/icces.2024.010900

Abstract Photodetectors with long detection distances and fast responses are important media in constructing a non-contact human-machine interface for the human-machine interaction. All-inorganic perovskite have excellent optoelectronic performance with high moisture and oxygen resistance, making them one of the promising candidates for high-performance photodetectors, but a simple, low-cost and reliable fabrication technology is urgently needed. Here, a dual-function laser etching method is developed to complete both the lyophilic split-ring structure and electrode patterning. This novel split-ring structure can capture the perovskite precursor droplet efficiently and achieve the uniform and compact deposition of CsPbBr3 films. Furthermore, our… More >

H. K. Hassun^a, B. K. H. Al-Maiyaly^a, A. H. Shaban^b,*

Chalcogenide Letters, Vol.20, No.2, pp. 145-152, 2023, DOI:10.15251/CL.2023.202.145

Abstract In this work, we have examined the spectral response of (p-CuAlSe₂/n-Si) detector, (CAS) thin films deposited by thermal evaporation at RT with a thickness (450) nm, and annealing temperature at (473K) for 2 h. Optical transmission measurements displayed reasonably slight transmission besides higher absorbance trendy the visible region, energy gaps were observed by annealing, were found to be direct, and decreased with the effect of annealing. The extreme responsivity value arises at wavelength 459 nm, with improvement value of specific detectivity and quantum efficiency the annealing films be situated originate as greatest suitable aimed at numerous More >

A. Arulmary^1,*, V. Rajamani², T. Kavitha²

Computer Systems Science and Engineering, Vol.46, No.2, pp. 1617-1630, 2023, DOI:10.32604/csse.2023.034681 - 09 February 2023

Abstract The method opted for accuracy, and no existing studies are based on this method. A design and characteristic survey of a new small band gap semiconducting Single Wall Carbon Nano Tube (SWCNT) Field Effect Transistor as a photodetector is carried out. In the proposed device, better performance is achieved by increasing the diameter and introducing a new single halo (SH) doping in the channel length of the CNTFET device. This paper is a study and analysis of the performance of a Carbon Nano Tube Field Effect Transistor (CNTFET) as a photodetector using the self-consistent Poisson… More >