S. I. Aziz, G. G. Ali^*

Chalcogenide Letters, Vol.22, No.3, pp. 239-253, 2025, DOI:10.15251/CL.2025.223.239

Abstract This work investigates the photodetector characteristics of lead and cadmium sulfide thin films deposited on porous silicon heterojunction at composites (x=0,0.25,0.5,0.75,1). The characteristics of all deposited samples were estimated by X-ray diffraction (XRD), highresolution scanning electron microscope (FESEM), Energy-dispersive X-ray (EDX), I-V measurements, and photodetector properties. PbS and CdS thin films have been successful, and photodetector properties on the porous silicon surface have performed well using the chemical spray method. An X-ray confirmed that the prepared samples have a crystalline phase structure. Besides, the results indicate that the PbS and CdS thin films have cubic… More >

F. Saker^a,*, L. Remache^a, D. Belfennache^b, K. R. Chebouki^a, R. Yekhlef^b

Chalcogenide Letters, Vol.22, No.2, pp. 151-166, 2025, DOI:10.15251/CL.2025.222.151

Abstract In this work the chemical bath deposition (CBD) method was used to synthesize Cadmium sulphide (CdS) thin films on glass, silicon (Si), and porous silicon (PSi) substrates. The PSi substrates were prepared by an electrochemical etching method using different current densities at constant etching time of 5 minutes. The CdS thin films were characterized using the X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), optical transmittance spectroscopy in the Uv visible range, and electrical characterization (I–V characteristics). The obtained results demonstrated that the morphology of the deposited materials was influenced by the… More >

A. A. Ahmed^a, G. G. Ali^b,*, N. A. Daham^a

Chalcogenide Letters, Vol.21, No.1, pp. 81-97, 2024, DOI:10.15251/CL.2024.211.81

Abstract In this work, copper sulfide (CuS) nanostructure was deposited on a porous silicon wafer for the visible light by spray pyrolysis method. Through this, a series of devices were suggested as a part of the deposit concentration of CuS on n-type porous silicon. Simultaneously, the physical features of the attained film were illustrated. FESEM exhibited that the average nanoparticle diameter increased with the concentration of CuS at orientation (100) and was found to be 47.84 nm, 56.36nm and 71.32nm, while the average diameter at (111) orientation was found to be 37.64 nm, 41.46nm, 55.22 nm… More >

F. B. ohammed Ameen^a, M. H. Younus^b, G. G. Ali^c,*

Chalcogenide Letters, Vol.21, No.4, pp. 343-354, 2024, DOI:10.15251/CL.2024.214.343

Abstract In this work, the gas sensing properties of ZnS/Porous silicon heterostructures have been investigated. . Zinc sulfide(ZnS) with high gas sensing performance is successfully synthesized over the Porous silicon substrate by the spray pyrolysis method. The properties of the as-prepared samples were characterized X-ray diffraction (XRD), scanning electron microscope (SEM), Fourier transform spectrum (FTIR) and optical properties. The results reveal that the properties of the ZnS/Porous silicon heterostructures enhanced when the when the ZnS concentration is increased. The performance ZnS/Porous silicon as a gas-sensing show that the maximum sensitivity is found to be 5.11 at More >

H. R. Hassan, A. N. Abd^*, M. J. M. Ali

Chalcogenide Letters, Vol.21, No.11, pp. 855-866, 2024, DOI:10.15251/CL.2024.2111.855

Abstract Using a laser energy of no more than 600 mJ/pulse and a maximum of 500 pulses, this work selectively produced pure copper, indium, gallium, and selenide (CIGS) NPs using a laser ablation method with distilled water and n-type porous silicon prepared by the photoelectron etching method. The material exhibits quantum dot behavior, according to experimental investigations. Porous silicone bases were produced using a current density of 10 mA/cm2 and an etching time of 15 min. Tests XRD, SEM, AFM, FTIR, UV, PL were conducted for the porous silicone and CIGS NPs to ensure that each More >

Haneen D. Jabbar^1,*, Makram A. Fakhri^1,*, Mohammed Jalal Abdul Razzaq¹, Omar S. Dahham^2,3, Evan T. Salim⁴, Forat H. Alsultany⁵, U. Hashim⁶

Journal of Renewable Materials, Vol.11, No.3, pp. 1101-1122, 2023, DOI:10.32604/jrm.2023.023698 - 31 October 2022

Abstract Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5–15 min at 2.5 min intervals. X-ray diffraction, room-temperature photoluminescence, atomic force microscopy and field emission scanning electron microscopy images, and electrical characteristics in the prepared GaN on the Psi film were investigated. The optimum Psi substrate was obtained under the following conditions: 10 min, 10 mA/cm², and 24% hydrofluoric acid. The substrate exhibited two highly cubic… More >