J. S. Mohammed^a,*, F. K. Nsaif^b, Y. M. Jawad^a, K. A. Jasim^b, A. H. Al Dulaimi^a

Chalcogenide Letters, Vol.20, No.7, pp. 449-458, 2023, DOI:10.15251/CL.2023.207.449

Abstract In this work, As₆₀Cu_40-xSe_x thin films were synthesized, and the pulsed laser deposition method was used to study the effected partial replacement of copper with selenium. The electrical characteristics and optical characteristics, as indicated by the absorbance and transmittance as a function of wavelength were calculated. Additionally, the energy gap was computed. The electrical conductivity of the DC in the various conduction zones was calculated by measuring the current and voltage as a function of temperature. Additionally, the mathematical equations are used to compute the energy constants, electron hopping distance, tail width, pre-exponential factor, and density More >

Haneen D. Jabbar^1,*, Makram A. Fakhri^1,*, Mohammed Jalal Abdul Razzaq¹, Omar S. Dahham^2,3, Evan T. Salim⁴, Forat H. Alsultany⁵, U. Hashim⁶

Journal of Renewable Materials, Vol.11, No.3, pp. 1101-1122, 2023, DOI:10.32604/jrm.2023.023698 - 31 October 2022

Abstract Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5–15 min at 2.5 min intervals. X-ray diffraction, room-temperature photoluminescence, atomic force microscopy and field emission scanning electron microscopy images, and electrical characteristics in the prepared GaN on the Psi film were investigated. The optimum Psi substrate was obtained under the following conditions: 10 min, 10 mA/cm², and 24% hydrofluoric acid. The substrate exhibited two highly cubic… More >

Mayyadah H. Mohsin¹, Najwan H. Numan², Evan T. Salim^1,*, Makram A. Fakhri^2,*

Journal of Renewable Materials, Vol.9, No.9, pp. 1519-1530, 2021, DOI:10.32604/jrm.2021.015465 - 23 April 2021

Abstract A SiC nanofilms have been deposited and investigated on quartz and silicon substrates using pulsed laser deposition technique with the 300 pulses of Nd: YAG laser at two different laser wavelengths of 1064 nm and 532 nm. The structural, morphological, and optical properties of the deposited nanostructure SiC were prepared and characterized as a function of the wavelengths of the used laser. The structural result shows four different pecks at (111), (200), (220), and (311) planes related to Nano SiC. The transmission result presents that the optical energy gap value for the SiC nanostructure is More > Graphic Abstract