R. Singh^a,*, S. Kimothi^b, M. V. Singh^c, U. Rani^d, A. S. Verma^d,e,*

Chalcogenide Letters, Vol.20, No.8, pp. 573-578, 2023, DOI:10.15251/CL.2023.208.573

Abstract In this research paper, we have prepared thin film of MoS₂ by thermal evaporation technique and characterized it. This thin film depositions lead to amorphous thin film. To make it crystalline, thermal annealing of the film have deposited on the substrates at 800 ℃ for two hour under vacuum environment. X-ray diffraction data of thin film shows the poly-crystalline nature. The Atomic Force Microscopy (AFM) image of the thin film shows the crystallinity with regularly arranged grains. Furthermore, an unconventional MoS₂ based FET device has been fabricated by depositing thin film of MoS₂ on p-type silicon. Thereafter, More >

K. W. Sun^a, Z. Liu^b,*, R. X. Wang^b, X. C. Ling^a, J. W. Sun^a

Chalcogenide Letters, Vol.20, No.8, pp. 563-571, 2023, DOI:10.15251/CL.2023.208.563

Abstract Ba_0.7Sr_0.3TiO₃:Sm³⁺ modified K_xNa(_1-x)NbO₃ ceramics with perovskite-type structure were synthesized via solid state sintering method. Sm³⁺ ions doping was designed for substituting both A and B sites in the ABO3 structure, Sm³⁺ doped Ba_0.7Sr_0.3TiO₃ (Ba_0.7Sr_0.3TiO₃:Sm³⁺ ) oxide precursor powders with the chemical formula of Ba_0.7Sr_0.3xSm_x(Ti_1-xSm_x)O₃ (x=0.005, 0.015, 0.025) were synthesized. Combined Ba_0.7Sr_0.3TiO₃:Sm³⁺ with K_0.5Na_0.5NbO₃, the perovskite-type solid solution composite ceramics were fabricated via solid phase sintering method. X-Ray diffraction was used for investigating the phase structure of the precursor powders and luminescent composite ceramics. The photoluminescence properties of the Sm³⁺ ions in the Ba_0.7Sr_0.3TiO₃-K_0.5Na_0.5NbO₃ composite ceramic materials were systematically investigated by exploring More >

M. Fida^a, Nasarullah^a, S. A. Aldaghfag^b, M. Yaseen^a,*, M. Ishfaq^a

Chalcogenide Letters, Vol.20, No.8, pp. 559-562, 2023, DOI:10.15251/CL.2023.208.559

Abstract The structural, magnetic, optoelectronic, and thermoelectric (TE) characteristics of Nd₂MgX₄ (X = S, Se) are determined by utilizing the density functional theory (DFT) based full potential linearized augmented plane wave (FP-LAPW) method as employed in WEIN2k code. The exchange and correlation energies along with Coulomb interactions are brought into consideration by employing local density of approximation with Hubbard model (LDA+U). Tolerance (τ) factor and formation enthalpy were utilized to confirm the stability of both spinels. τ values are 0.70 and 0.68, and formation enthalpy values are (ΔH_f) are -3.34 eV and -2.19 eV for Nd₂MgX₄ (X =… More >

D. Dekhil^a,*, H. Guessas^a, A. Nouri^a, S. Ullah^b

Chalcogenide Letters, Vol.20, No.8, pp. 549-558, 2023, DOI:10.15251/CL.2023.208.549

Abstract SnS thin films were synthesized using the spray pyrolysis method and then annealed at 350, 400, and 450°C. According to the crystallographic analysis, the obtained SnS thin films crystallized in the polycrystalline orthorhombic system. The grains measured 47, 66, and 37 nm for the samples annealed at 350, 400, and 450°C, respectively. SEM and AFM images indicate that the samples’ surfaces were completely covered. Thus, the grains of SnS nanostructures have a granular-like shape and vary in size depending on the annealing temperatures. The transmittance measurement shows that annealing the sample at 400 °C extends… More >

J. H. Azzawi^a, B. A. Ahmed^b, K. A. Jasim^b, E. M. T. Salman^b,*

Chalcogenide Letters, Vol.20, No.9, pp. 649-656, 2023, DOI:10.15251/CL.2023.209.649

Abstract The DC electrical conductivity properties of Ge₆₀Se_40-xTe_x alloy with x = 0, 5, 10, 15 and 20). The samples were formed in the form of discs with the thickness of 0.25–0.30 cm and the diameter of 1.5 cm. Samples were pressed under a pressure of 6 tons per cm² , using a ton hydraulic press. They were prepared after being pressed using a ton hydraulic press using a hydraulic press. Melting point technology use to preper the samples. Continuous electrical conductivity properties were recorded from room temperature to 475 K. Experimental data indicates that glass containing… More >

L. Yang^*, X. Q. Yuan, R. Y. Liu, R. X. Song, Q. W. Wang, W. Liang

Chalcogenide Letters, Vol.20, No.9, pp. 639-648, 2023, DOI:10.15251/CL.2023.209.639

Abstract In this paper, we report a facile method for the synthesis of MoS₂ nanosheet/ MoS₂ nanowire homostructures by growing MoS₂ nanosheets on the surface of MoS₂ nanowires. Benefiting from the uniform coating of MoS2 nanosheets on the surface of MoS2 nanowires, the MoS₂ nanosheet/ MoS₂ nanowire homostructures highly expose their electrocatalytic active edge sites and exhibit an enhanced electrocatalytic performance. It demonstrates a low overpotential of 107 mV at 10 mA/cm² and a small Tafel slope of 64 mV/dec in 0.5 M H₂SO₄. This work provides an inspiration for the design of efficient electrocatalysts with no stacking and aggregation More >

N. S. Khairuddin^a, M. Z. Mohd Yusoff^a,*, H. Hussin^b

Chalcogenide Letters, Vol.20, No.9, pp. 629-637, 2023, DOI:10.15251/CL.2023.209.629

Abstract In this study, we used the PC1D simulator to demonstrate the performance analysis of a solar cell model based on gallium nitride (GaN). It has been discovered that when the layer thickness of the GaN substrate grows, the efficiency of solar cells decreases. This was found by comparing the doping concentration and layer thickness on the GaN and silicon substrates. As the thickness of the p-doping Si layer rises, cell efficiency increases just modestly. The optimal doping concentrations for GaN and p-silicon are 1x10¹⁸ cm^-3 and 1x10¹⁷ cm^-3 , respectively. In compared to other designs, GaN/p-silicon solar More >

A. Nouri^*, D. Dekhil, H. Guessas

Chalcogenide Letters, Vol.20, No.10, pp. 753-758, 2023, DOI:10.15251/CL.2023.2010.753

Abstract SnS nanostructures were prepared using the electrodeposition technique in aqueous solutions containing 0.1M of SnSO4 and Na2SO4. Three concentrations (0.05M, 0.10M, and 0.15M) of Na2SO4 were tested. The electrodeposition of SnS nanostructures on ITO substrates was investigated by cyclic voltammetry, chronoamperometry, SEM microscopy, and X-ray diffraction techniques. The concentration-dependent nucleation and growth mechanisms of electrodeposited SnS were analyzed using current transients. For the concentrations (0.05M and 0.10 M), the SnS films follow 3D growth in instantaneous nucleation mode. For a concentration of 0.15M, the SnS films start with progressive nucleation before switching to the instantaneous More >

T. X. Liu^a, C. A. Guo^a,*, F. S. Lu^b, X. Y. Zhang^a,c, L. Zhang^b, Z. J. Wang^a, Z. Y. Xu^a, G. L. Zhu^a

Chalcogenide Letters, Vol.20, No.10, pp. 741-749, 2023, DOI:10.15251/CL.2023.2010.741

Abstract Electrospark deposition coatings were prepared with different deposition voltage on CrNi3MoVA steel substrates by using a W-WS₂ sintered electrode and their tribological properties were investigated. The microhardness, roughness and tribological properties of the coatings were tested by using Vickers hardness tester, confocal laser scanning microscope and tribometer, and the morphologies, composition and phase structure were obtained by utilizing scanning electron microscopy (SEM), energy dispersive X-ray spectrum (EDS) and X-ray diffraction(XRD). The results showed that with the increase of deposition voltage, the hardness and roughness of the coatings increase. The coatings remarkably increase the tribological properties of More >

M. H. Mustafa, H. M. Ali^*, G. S. Ahmed, B. H. Hussein

Chalcogenide Letters, Vol.20, No.10, pp. 733-740, 2023, DOI:10.15251/CL.2023.2010.733

Abstract We studied at the morphology, structural setup, and optical characteristics of thin cadmium (CdSe) films a thickness of 250 nm that were created by thermal evaporation over glass, The films exhibited a hexagonal shape were crystalline, and tended to form grains in the (111) crystallographic direction, according to the X-ray diffraction examinations. These characteristics were established using the investigation's findings. Through the use of thin films of CdSe doped with Ag at a concentration of 1.5%, the crystal structure orientations for pure CdSe (25.32, 41.84) and CdSe:Ag (25.39, 41.01) that were both pure as well More >