O. V. Iaseniuc^*, M. S. Iovu

Chalcogenide Letters, Vol.20, No.10, pp. 725-731, 2023, DOI:10.15251/CL.2023.2010.725

Abstract In the present work some nanostructured quaternary chalcogenides of the As-S-Sb-Te sys tem have been investigated by a photoelectric method. The spectral distribution of steady state photocurrent I_ph=(λ) and the relaxation curves of photocurrent I_ph=(t) were registered at positive and negative polarity of the applied voltage to the top Al illuminated electrode. In the spectral distribution of steady-state photocurrent, for the amorphous thin films As_1.17S_2.7Sb_0.83Te_0.40, As_1.04S_2.4Sb_0.96Te_0.60, As_0.63S_2.7Sb_1.37Te_0.30, and As_0.56S_2.4Sb_1.44Te_0.60 in the wavelength range λ=0.50÷0.92 mm (2.48÷1.35 eV) some maxima were detected, which are the result of the presence of binary clusters As₂S₃, Sb₂S₃ and Sb₂S₃. The photo voltaic method was used More >

R. Ranjan^a,b, C. M. S. Negi^b, S. K. Choubey^a, K. P. Tiwary^c,*

Chalcogenide Letters, Vol.20, No.10, pp. 709-724, 2023, DOI:10.15251/CL.2023.2010.709

Abstract Manganese-doped cadmium sulphide semiconductor nanoparticles (CdS: Mn) NPs have been created utilizing a microwave-assisted solvothermal technique at different Mn concentrations (0, 1%, 3%, and 5%). The chemicals utilized for the preparation of Mn doped CdS nanoparticles were sodium sulphide (Na₂S.xH₂O), manganese chloride (MnCl₂.4H₂O), and cadmium acetate (CH₃COO)₂Cd., H₂O). To determine the structural dimensions of the generated nanoparticles, the Debye-Scherer equation was used to calculate the average crystallite size at the full-width half maximum (FWHM) of the diffraction peaks. FTIR spectra analysis was used to look at the various functional and vibrational groups present in the Mn-doped CdS More >

M. Guenfoud^∗, M. Hamouda

Chalcogenide Letters, Vol.20, No.10, pp. 697-708, 2023, DOI:10.15251/CL.2023.2010.697

Abstract Recently, BiCuTeO is considered as one of the promising thermoelectric materials due to its ultra-low thermal conductivity. For this reason, the thermoelectric characteristic of this material has been studied to evaluate the lattice thermal conductivity ( More >

T. A. Chowdhury^*, S. M. T. Hossain, M. K. Anna, S. A. Ritu, S. F. Nuri

Chalcogenide Letters, Vol.20, No.11, pp. 837-845, 2023, DOI:10.15251/CL.2023.2011.837

Abstract Researchers are doing intense research in tin sulfide (SnS)-based solar cells because of their outstanding semiconducting features. In this work, the solar cell capacitance simulator (SCAPS-1D) has been used to do the simulation study of thin films solar cells using SnS absorber layer with different buffer layers (ZnO, ZnSe, CdZnS, TiO₂) in comparison to the toxic CdS buffer layer. Photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) is evaluated as a function of absorber layer thickness, different buffer layer and buffer layer thickness. Device stability at different operating temperature is also evaluated. More >

S. W. Xu^*, T. W. Liang

Chalcogenide Letters, Vol.20, No.11, pp. 829-835, 2023, DOI:10.15251/CL.2023.2011.829

Abstract We investigated the effect of the elemental substitution of As by Sb on the threshold behaviours in Ge_xSb₁₀Se_90-x glasses. We found that, while the transition thresholds at MCN=2.4 and 2.67 were verified in the GeAsSe glasses, the transition thresholds can be changed to chemically stoichiometric compositions if As is substituted by Sb. We further deconvolved Raman spectra into different structural units and the change of their respective intensity showed the same behaviour, and this was ascribed to the chemical effect induced by a large difference of the atomic radius between As and Sb, and a relatively More >

L. R. Singh^a,*, R. K. L. Singh^b, M. A. Hussain^c

Chalcogenide Letters, Vol.20, No.11, pp. 821-828, 2023, DOI:10.15251/CL.2023.2011.821

Abstract Mn doped nanocrystalline PbS thin films were deposited onto glass substrates by chemical bath deposition (CBD) method. All the deposited thin films were found to be crystalline having cubic phase structure. The optical properties of the Mn doped nanocrystalline PbS thin films have been studied. They have high absorbance in the UV-visible region. The linear nature of (αhν)² vs (hν) plots of PbS thin films confirmed that the transition is direct and the optical band gap energy of PbS films is found to increase from 1.90 eV to 2.28 eV with decreasing crystallite size from 21 More >

S. Petrosyan^a,*, A. Musayelyan^a, E. Zaretskaya^b, V. Gremenok^b,c, K. Buskis^b, A. Stanchik^b,c

Chalcogenide Letters, Vol.20, No.11, pp. 811-820, 2023, DOI:10.15251/CL.2023.2011.811

Abstract We present the results of the study of the microstructure, X-ray diffraction and Raman scattering spectra of Cu₂SnS₃ (CTS) films synthesized at 500℃ by the sulfurization of SnCu stacked metal precursors with different annealing time. The results indicate that sulfurization time has a great influence on both composition and morphology of the film. It is shown that the process of formation of a single-phase CTS compound with a monoclinic structure and composition close to stoichiometry is completed for a synthesis time of 60 - 80 min. With an increase in the time of synthesis to 120 More >

A. Chirita^a,*, A. Hustuc^b, N. Nasedchina^a, S. Vatavu^a

Chalcogenide Letters, Vol.20, No.11, pp. 803-809, 2023, DOI:10.15251/CL.2023.2011.803

Abstract The polymer/67at %(As₂S₃)_0.985(Bi₂Se₃)_0.015:33 at.% As₂Se₃ structure for X-ray imaging has been investigated. The possibility of registering relief-phase images for radiation of “white” spectrum of tungsten anode X-ray tube was shown. More >

U. Chalapathi^a, P. R. Prasad^b, C. P. Reddy^c, S. Sambasivam^d, P. Rosaiah^e, M. Ouladsmane^f, S. Alhammadi^g, S. M. Lee^a, S. H. Park^a,*

Chalcogenide Letters, Vol.20, No.11, pp. 797-802, 2023, DOI:10.15251/CL.2023.2011.797

Abstract Wittichenite Cu₃BiS₃ thin films have received significant interest as light harvesters owing to their suitable optoelectronic properties and presence of earth-abundant, and non-toxic elements. We have synthesized Cu₃BiS₃ thin films by a two-stage process; in which, Cu/Bi/Cu metallic stacks were thermally evaporated and then sulfurized at 400℃ for 10–60 min in a quartz tubular furnace. The influence of sulfurization time on the structural, microstructural, compositional, optical, and electrical properties of the films was investigated. The results revealed that the films were orthorhombic Cu₃BiS₃ with the following lattice parameters: a = 0.768 nm; b = 1.043 nm; and More >

K. A. Mohammed^a,*, R. A. Talib^b, B. Bhavani^c, N. H. J. Al Hasan^d, A. Kareem^e, F. H. Alsultany^f, R. S. Zabibah^g, M. A. Alkhafaji^h, S. Sharma^i,j

Chalcogenide Letters, Vol.20, No.11, pp. 789-796, 2023, DOI:10.15251/CL.2023.2011.789

Abstract CdZnS thin films created via chemical bath deposition were examined to see how Cu doping affected their characteristics. Cu ions were added to the films in order to change their optical, structural, and morphological characteristics. These findings suggest that Cu doping can be used to modify the optical characteristics of CdZnS thin films. By using Xray diffraction (XRD) and the energy dispersive analysis of X-ray method (EDAX), we were able to investigate the compositional ratio as well as the structural features of the films. The field emission scanning electron microscopy (FESEM) technique was utilized in More >