R. H. Athab, B. H. Hussein^*

Chalcogenide Letters, Vol.20, No.2, pp. 91-100, 2023, DOI:10.15251/CL.2023.202.91

Abstract A thin film of AgInSe₂ and Ag_1-xCu_xInSe₂ as well as n-Ag_1-xCu_xInSe₂ /p-Si heterojunction with different Cu ratios (0, 0.1, 0.2) has been successfully fabricated by thermal evaporation method as absorbent layer with thickness about 700 nm and ZnTe as window layer with thickness about 100 nm. We made a multi-layer of p-ZnTe/n-AgCuInSe2/p-Si structures, In the present work, the conversion efficiency (η) increased when added the Cu and when used p-ZnTe as a window layer (WL) the bandgap energy of the direct transition decreases from 1.75 eV (Cu=0.0) to 1.48 eV (Cu=0.2 nm) and the bandgap energy for… More >

I. Nkrumah^*, F. K. Ampong, A. Britwum, M. Paal, B. Kwakye-Awuah, R. K. Nkum, F. Boakye

Chalcogenide Letters, Vol.20, No.3, pp. 205-213, 2023, DOI:10.15251/CL.2023.203.205

Abstract Single phase lead tin sulfide (PbSnS) thin films have been successfully deposited on ITO coated glass substrates using a 3-electrode electrochemical cell having graphite as the counter electrode and Ag/AgCl as the reference electrode. In this single-step electrodeposition, the PbSnS precursor thin film was directly electrodeposited on the conductive substrate from the electrolytic bath solution which contained Pb(NO₃)₂, SnCl₂.2H₂O and Na₂S₂O₃. This was followed by annealing in air at 250 °C for an hour to improve the crystallinity. The annealed films were characterized by a variety of techniques. Powder X-ray diffraction revealed peaks which were indexed to More >

R. S. Ali^a,*, H. S. Rasheed^b, N. D. Abdulameer^c, N. F. Habubi^d, S. S. Chiad^b

Chalcogenide Letters, Vol.20, No.3, pp. 187-196, 2023, DOI:10.15251/CL.2023.203.187

Abstract Chemical spray pyrolysis (CSP) was utilized to create pure Zinc Sulfide (ZnS) and magnesium (Mg) doped thin films on a clean glass substrate at a temperature equal to 400°C. X-ray diffraction test revealed a cubic wurtzite crystal structure with average crystallite sizes of 10.99 and 12.27 nm for ZnS and ZnS: Mg, respectively. XRD analysis of the doped films revealed a polycrystalline structure with a predominant peak along the (220) plane and additional peaks along the (111), (200), and (222) planes. The grain size raised from 10.99 to 12.27 nm as a result of the More >

S. M. Alias^a, M. Z. Mohd Yusoff^b,*, M. S. Yahya^c

Chalcogenide Letters, Vol.20, No.4, pp. 293-299, 2023, DOI:10.15251/CL.2023.204.293

Abstract The purpose of the study is to determine the best technique for etching ZnO thin films. ZnO is deposited on the glass substrate using a radio frequency sputtering equipment. To etch the ZnO thin film, hydrogen peroxide (H₂O₂) concentrations of 10%, 20%, and 30% are utilised, with etching times of 30 and 60 seconds. The optical band gap is lowered after a specific quantity of etching, which shows that the film's crystallinity quality has improved. The impact of various ZnO thicknesses on the sample's optical properties is investigated using OPAL 2 simulator. In comparison to other More >

R. Daira^a,*, B. Boudjemaa^b, A. Mohammedi^c

Chalcogenide Letters, Vol.20, No.4, pp. 277-284, 2023, DOI:10.15251/CL.2023.204.277

Abstract In this work, CuO thin films about the synthesis of the thin films are prepared on glass substrate using spray pyrolysis technique at room temperature different annealing times in temperature 450 0 C.In order to study the effect of annealing times onthe structural, optical and electrical properties.XRD analysis has shown that films with a polycrystalline structurehave a(Monoclinic) structure.In addition, the crystallite phase CuO increases with increasing of annealing temperature.Moreover, with a preferred orientation along (002) peak.The optical properties confirmed that the elaborated films have a transmittance of 70%. We have found that the band gap More >

A. Gahtar^a,*, C. Zaouche^b, A. Ammari^c,d, L. Dahbi^e

Chalcogenide Letters, Vol.20, No.5, pp. 377-385, 2023, DOI:10.15251/CL.2023.205.377

Abstract In this work, the bimetallic (Ni,Co) sulfide film of 852.213 nm thickness was successfully deposited using the spray pyrolysis technique at 300 °C. The compound was prepared with a mixture of nickel acetate (C₄H₆O₄Ni. 4H₂O), cobalt chloride (CoCl₂. 6H₂O), and thiourea (CS(NH₂)₂) as precursors for Ni, Co, and S, respectively. The temperature and sedimentation time were 300 °C and 10 min, respectively; the film was then, characterized without any thermal post-treatment. The structural, morphological, optical and electrical analysis were carried out to investigate the different properties of the material. The X-ray diffraction analysis confirmed the presence of NiCo₂S₄… More >

A. J. Jarjees Alsoofy^a, R. S. Ali^b,*, Z. S. A. Mosa^c, N. F. Habubi^d, S. S. Chiad^e

Chalcogenide Letters, Vol.20, No.5, pp. 367-376, 2023, DOI:10.15251/CL.2023.205.367

Abstract Thermal evaporation was used to prepare nickel (Ni) doped cadmium selenide thin films in different proportions (0, 1 and 3) wt.% on glass substrates at room temperature. According to XRD examination, all films possessed a polycrystalline hexagonal structure, with the (002) plane as the ideal orientation. According to AFM analysis, the average particle size decreases as the amount of doping increases, showing that the distribution of grains has become more uniform. The transmission and distortion ratios of the films were measured to learn more about their optical properties, which revealed that the (CdSe) films' transmittance More >

P. Yadav^a, C. Tyagi^b,*, A. Devi^c, N. Gahlot^d

Chalcogenide Letters, Vol.20, No.5, pp. 353-365, 2023, DOI:10.15251/CL.2023.205.353

Abstract The present work reports the influence of selenium replacement by bismuth on the nonlinear optical parameters of ternary Se_85-xTe₁₅Bi_x (x=0, 1, 2, 3, 4, 5 atomic %) chalcogenide thin films. Calculation of nonlinear refractive index (n_{2>/sub>), two-photon absorption coefficient (β2>/sub>) and third-order susceptibility (χ ⁽³⁾ ) by well known Z-scan technique with femtosecond laser pulses were done. The Z-scan spectra for Se85-xTe15Bix upto Bi= 4 atomic % results in self- focusing behavior of n2>/sub> is positive while for Bi=5 atomic % n2>/sub> is negative. The behavior of n2>/sub> by using different physical parameters are exlpained. The comparison of experimental} More >

S. John^a,b,*, M. Francis^b, A. P. Reena Mary^a, V. Geetha^a

Chalcogenide Letters, Vol.20, No.5, pp. 315-323, 2023, DOI:10.15251/CL.2023.205.315

Abstract Thin films of SnS were deposited chemically, and they are annealed at four different temperatures: 100 °C, 150 °C, 200 °C, and 250 °C. X-ray diffraction, Raman analysis, UV-visible spectroscopy, field emission scanning electron microscopy, and energy dispersive spectroscopy were used to investigate the impact of annealing temperature on the structural, optical, morphological, and chemical properties of thin films. As the annealing temperature rose, it was seen from the XRD patterns that the crystallinity of SnS films improved. At 250 °C, the film was almost evaporated, and the XRD pattern showed no peaks at all.… More >

I. Nkrumah^*, F. K. Ampong, A. Britwum, M. Paal, B. Kwakye-Awuah, R. K. Nkum, F. Boakye

Chalcogenide Letters, Vol.20, No.6, pp. 399-407, 2023, DOI:10.15251/CL.2023.206.399

Abstract A study has been carried out to investigate the effect of the concentration of Sn in the metallic precursor on the structure, morphology, optical and electrical properties of PbSnS thin films. The films were directly electrodeposited on ITO-coated glass substrates using a 3-electrode electrochemical cell having graphite as the counter electrode and Ag/AgCl as the reference electrode. Several depositions were carried out, with each deposited film having a different concentration of Sn in the metallic precursor whilst all other parameters were kept constant for all the films. Post deposition annealing was carried out in air… More >