R. Daira^a,*, B. Boudjemaa^b, A. Mohammedi^c

Chalcogenide Letters, Vol.20, No.4, pp. 277-284, 2023, DOI:10.15251/CL.2023.204.277

Abstract In this work, CuO thin films about the synthesis of the thin films are prepared on glass substrate using spray pyrolysis technique at room temperature different annealing times in temperature 450 0 C.In order to study the effect of annealing times onthe structural, optical and electrical properties.XRD analysis has shown that films with a polycrystalline structurehave a(Monoclinic) structure.In addition, the crystallite phase CuO increases with increasing of annealing temperature.Moreover, with a preferred orientation along (002) peak.The optical properties confirmed that the elaborated films have a transmittance of 70%. We have found that the band gap More >

A. Gahtar^a,*, C. Zaouche^b, A. Ammari^c,d, L. Dahbi^e

Chalcogenide Letters, Vol.20, No.5, pp. 377-385, 2023, DOI:10.15251/CL.2023.205.377

Abstract In this work, the bimetallic (Ni,Co) sulfide film of 852.213 nm thickness was successfully deposited using the spray pyrolysis technique at 300 °C. The compound was prepared with a mixture of nickel acetate (C₄H₆O₄Ni. 4H₂O), cobalt chloride (CoCl₂. 6H₂O), and thiourea (CS(NH₂)₂) as precursors for Ni, Co, and S, respectively. The temperature and sedimentation time were 300 °C and 10 min, respectively; the film was then, characterized without any thermal post-treatment. The structural, morphological, optical and electrical analysis were carried out to investigate the different properties of the material. The X-ray diffraction analysis confirmed the presence of NiCo₂S₄… More >

A. J. Jarjees Alsoofy^a, R. S. Ali^b,*, Z. S. A. Mosa^c, N. F. Habubi^d, S. S. Chiad^e

Chalcogenide Letters, Vol.20, No.5, pp. 367-376, 2023, DOI:10.15251/CL.2023.205.367

Abstract Thermal evaporation was used to prepare nickel (Ni) doped cadmium selenide thin films in different proportions (0, 1 and 3) wt.% on glass substrates at room temperature. According to XRD examination, all films possessed a polycrystalline hexagonal structure, with the (002) plane as the ideal orientation. According to AFM analysis, the average particle size decreases as the amount of doping increases, showing that the distribution of grains has become more uniform. The transmission and distortion ratios of the films were measured to learn more about their optical properties, which revealed that the (CdSe) films' transmittance More >

P. Yadav^a, C. Tyagi^b,*, A. Devi^c, N. Gahlot^d

Chalcogenide Letters, Vol.20, No.5, pp. 353-365, 2023, DOI:10.15251/CL.2023.205.353

Abstract The present work reports the influence of selenium replacement by bismuth on the nonlinear optical parameters of ternary Se_85-xTe₁₅Bi_x (x=0, 1, 2, 3, 4, 5 atomic %) chalcogenide thin films. Calculation of nonlinear refractive index (n_{2>/sub>), two-photon absorption coefficient (β2>/sub>) and third-order susceptibility (χ ⁽³⁾ ) by well known Z-scan technique with femtosecond laser pulses were done. The Z-scan spectra for Se85-xTe15Bix upto Bi= 4 atomic % results in self- focusing behavior of n2>/sub> is positive while for Bi=5 atomic % n2>/sub> is negative. The behavior of n2>/sub> by using different physical parameters are exlpained. The comparison of experimental} More >

S. John^a,b,*, M. Francis^b, A. P. Reena Mary^a, V. Geetha^a

Chalcogenide Letters, Vol.20, No.5, pp. 315-323, 2023, DOI:10.15251/CL.2023.205.315

Abstract Thin films of SnS were deposited chemically, and they are annealed at four different temperatures: 100 °C, 150 °C, 200 °C, and 250 °C. X-ray diffraction, Raman analysis, UV-visible spectroscopy, field emission scanning electron microscopy, and energy dispersive spectroscopy were used to investigate the impact of annealing temperature on the structural, optical, morphological, and chemical properties of thin films. As the annealing temperature rose, it was seen from the XRD patterns that the crystallinity of SnS films improved. At 250 °C, the film was almost evaporated, and the XRD pattern showed no peaks at all.… More >

I. Nkrumah^*, F. K. Ampong, A. Britwum, M. Paal, B. Kwakye-Awuah, R. K. Nkum, F. Boakye

Chalcogenide Letters, Vol.20, No.6, pp. 399-407, 2023, DOI:10.15251/CL.2023.206.399

Abstract A study has been carried out to investigate the effect of the concentration of Sn in the metallic precursor on the structure, morphology, optical and electrical properties of PbSnS thin films. The films were directly electrodeposited on ITO-coated glass substrates using a 3-electrode electrochemical cell having graphite as the counter electrode and Ag/AgCl as the reference electrode. Several depositions were carried out, with each deposited film having a different concentration of Sn in the metallic precursor whilst all other parameters were kept constant for all the films. Post deposition annealing was carried out in air… More >

A. M. Jawore^a, T. Xaba^a,*, M. J. Moloto^b

Chalcogenide Letters, Vol.20, No.7, pp. 497-505, 2023, DOI:10.15251/CL.2023.207.497

Abstract Nickel sulfides nanocrystals may be regarded as promising of materials in different research areas such as catalysts, solar cells, and electrode-materials. (Z)-2-(pyrrolidin-2-ylidene) thiourea ligand and (Z)-2-(pyrrolidin-2-ylidene) thiourea based nickel (II) complex have been prepared and utilized as single source molecular precursor for the synthesis of nickel sulfide nanoparticles and thin films. The effect of temperature was studies during the synthetic processes. The synthesized nanomaterials were characterized with various instruments. UV-Vis spectroscopy results of the nanoparticles were red shifting when the reaction temperature was increased whereas the blue shift was observed when the temperature was elevated More >

S. Sultanbekov^a, O. Prikhodko^b, N. Almas^c,*

Chalcogenide Letters, Vol.20, No.7, pp. 487-496, 2023, DOI:10.15251/CL.2023.207.487

Abstract The optical properties of Ge₂Sb₂Te₅ thin films were studied as a function of thickness. An increase in optical band gap with decreasing film thickness has been observed. The current– voltage characteristics measured in Ge₂Sb₂Te₅ thin films in the current mode are studied. A decrease in switching time and threshold voltage with decreasing film thickness is established. More >

R. H. Athab, B. H. Hussein^*

Chalcogenide Letters, Vol.20, No.7, pp. 477-485, 2023, DOI:10.15251/CL.2023.207.477

Abstract Zinc Telluride ZnTe alloys and thin film have been fabricated and deposited on glass substrates by thermal evaporation method which may be a suitable window layer of zinc telluride with different annealing temperatures (373 and473) K for 60 minutes in vacuum. Deposited thin films with thickness 100 nm was characteristic by using X-ray diffraction XRD to know structures, Atomic Force Microscopy (AFM) to evaluate surface topology, morphology. It was found out that the vacuum annealing improves on thin ZnTe films structure and surface morphology. Structural analysis reveals that ZnTe films have zinc blende structure of More >

J. S. Mohammed^a,*, F. K. Nsaif^b, Y. M. Jawad^a, K. A. Jasim^b, A. H. Al Dulaimi^a

Chalcogenide Letters, Vol.20, No.7, pp. 449-458, 2023, DOI:10.15251/CL.2023.207.449

Abstract In this work, As₆₀Cu_40-xSe_x thin films were synthesized, and the pulsed laser deposition method was used to study the effected partial replacement of copper with selenium. The electrical characteristics and optical characteristics, as indicated by the absorbance and transmittance as a function of wavelength were calculated. Additionally, the energy gap was computed. The electrical conductivity of the DC in the various conduction zones was calculated by measuring the current and voltage as a function of temperature. Additionally, the mathematical equations are used to compute the energy constants, electron hopping distance, tail width, pre-exponential factor, and density More >