A. S. Alqarni^a,, S. N. Alamri^b,

Chalcogenide Letters, Vol.22, No.5, pp. 493-506, 2025, DOI:10.15251/CL.2025.225.493

Abstract Abundant and environmentally friendly solar cells materials Cu₂AlSnS₄ (CATS) thin film successively prepared by electron beam deposition system. The impact of various deposition times and post-annealing at 450 °C under nitrogen gas atmosphere on the structures, morphologies, and spectroscopic characteristics of the obtained CATS films were investigated. Both deposition time variation and annealing process were found to significantly affect the crystallinity, bonding vibration, surface morphology, energy band gaps, and Urbach energy of the CATS films. EDX spectra of the films disclosed the existence of all constituents’ elements. XRD analysis of the post-annealed films verified their multiple More >

D. M. A. Latiff, B. A. Ahmed, S. M. Ali, K. A. Jasim^*

Chalcogenide Letters, Vol.22, No.6, pp. 521-528, 2025, DOI:10.15251/CL.2025.226.521

Abstract In this paper, the effect of sulfur substitution by arsenic on the structural, optical properties of thin films of the trivalent chalcogenide Se₆₆S_44-xAs_x at different concentrations (where x = 0, 8, 16, and 24 at %) was studied. Thin films with a thickness of (300±10 nm) were prepared using thermal evaporation of bulk samples. Structural examinations were performed using XRD and AFM techniques. All the studied film samples were amorphous in structure and the intensity of the crystalline parts was high in the range of 10-40. Also, in Atomic Force Microscopy (AFM). It was found that… More >

D. A. Adu-Boadu^a, M. Paal^a, M. B. Mensah^b, I. Nkrumah^a,*, R. Y. Tamakloe^a, F. K. Ampong^a, R. K. Nkum^a, F. Boakye^a

Chalcogenide Letters, Vol.22, No.7, pp. 603-614, 2025, DOI:10.15251/CL.2025.227.603

Abstract Cd_1-xPb_xSe (0≤ x ≤ 1) thin films with values of x = 0, 0.2, 0.4, 0.5 and 1, have been deposited by chemical bath technique for photovoltaic application. The deposition temperature, time and pH of the reactive solutions were 80℃, 150 min and 11 respectively. The XRD results confirmed the polycrystalline nature of all the films. It also showed that all the films exist in face centered cubic structures. There were no pure phases of CdSe and PbSe identified in the XRD results of the ternary compounds. The average grain sizes determined for each sample were… More >

M. Abbas^a, M. Haseeb-u-Rehman^a, M. Sohail^b, G. H. Tariq^a,*

Chalcogenide Letters, Vol.22, No.7, pp. 561-577, 2025, DOI:10.15251/CL.2025.227.561

Abstract This work presents the fabrication of NiO thin films via versatile sol-gel spin coating method and investigation of annealing effects on their physical properties. After the deposition process, the NiO thin films underwent annealing process at different values of temperatures ranging from 200°C to 350°C for one hour duration. XRD patterns confirmed the polycrystalline nature, along the preferred orientations (110) and (101) planes. Nanoparticles in NiO thin films demonstrated an increase in crystallite size with rising annealing temperatures, reaching a maximum size of 49 nm at annealing temperature 300°C. FTIR patterns revealed Ni-O bands at… More >

A. W. Jabbar^a, N. K. Abbas^b,*

Chalcogenide Letters, Vol.22, No.8, pp. 735-752, 2025, DOI:10.15251/CL.2025.228.735

Abstract Nanostructured CdS and CdS: Cu thin films were synthesized by pulsed laser deposition with a Nd: YAG laser of different energies, 0.1, 0.5, and 1 W. The number of pulses was 300, and the frequency was 20 kHz. The CdS nanoparticles were deposited on a glass substrate. The optical, structural, and morphological properties were investigated utilized X-ray diffraction, UV-Vis spectrophotometry, and field emission scanning electron microscopy. From 2.25 to 2.1 eV, the results demonstrate that the band gap energy reduces as laser energy increases. Morphological investigations reveal that the laser energy has a significant impact More >

Y. B. K. Kumar^a,, S. G. Prasad^b, A. S. S. Smitha^c, S. M. Naidu^d, G. S. Babu^c, P. U. Bhaskar^e, U. Chalapathi^f,

Chalcogenide Letters, Vol.22, No.9, pp. 847-854, 2025, DOI:10.15251/CL.2025.229.847

Abstract Cu₂MgSnS₄ thin films have emerged as potential candidates for use in photovoltaic applications owing to their direct band gap properties. These quaternary compounds are fabricated through the spray pyrolysis method at 175 °C, utilizing two different carrier gases, such as air and nitrogen. After pyrolysis, deposited films are annealed at 450 °C for 1 hour. Structural analysis confirms the films exhibit a tetragonal kesterite structure. Using nitrogen as the carrier gas results in a larger crystallite size, accompanied by a reduction in both the dislocation density and microstrain. Raman spectroscopy further validates phase purity. Surface morphology analysis indicates More >

S. N. Yasinova^a,b,*, A. B. Rzayeva^a,b, M. H. Huseynaliyev^b, B. T. Hagieva^a, G. M. Huseynov^a,b

Chalcogenide Letters, Vol.22, No.10, pp. 883-888, 2025, DOI:10.15251/CL.2025.2210.883

Abstract The thin films and powders of PbS, PbSe, and PbSe and PbS_0.5Se_0.5 have been obtained by chemical precipitation method. The X-ray spectra of the obtained thin layers were obtained through the"Miniflex 600" diffractometer, and elemental analyses were performed. Thermogravimetric analyses of the powders of all three compounds were conducted in the temperature range of 20-800°C using the "NETZSCH STA 449 F3" apparatus. It has been determined from the X-ray spectra that the angular positions of all the peaks of PbS, PbSe, and PbSe and PbS_0.5Se_0.5 thin layers coincide with the positions of the corresponding diffraction peaks More >

F. T. Ibrahim^1,*, A. A. Qassim², S. M. A. Al-Dujayli¹

Chalcogenide Letters, Vol.22, No.11, pp. 929-937, 2025, DOI:10.15251/CL.2025.2211.929

Abstract This work, pulse laser deposition technique was employee to synthesize Cu2ZnSnS4 (CZTS) thin films with different lasing energy (500, 600, 700, 800, 900 mJ). Through using different characterization technique to study structural, optical and gas sensing properties. the use of X-ray diffraction, the samples have polycrystalline with cubic structure. The EDX examination showed that the sample contains a suitable amount of Zn, Sn, Cu, and S atoms to form CZTS. UV-VIS measurement indicates that the synthesis of thin films employing a lower laser energy result in a drop in deposit sample thickness, which in turn More >

Zhuoyuan Zheng^*

The International Conference on Computational & Experimental Engineering and Sciences, Vol.33, No.2, pp. 1-1, 2025, DOI:10.32604/icces.2025.010939

Abstract Silicon (Si) anodes are promising candidates for lithium-ion batteries due to their high theoretical capacity and low operating voltage. However, the significant volume expansion that occurs during lithiation presents challenges, including material degradation and decreased cycle life. This study employs an electrochemical-mechanical-thermal coupled finite element model, supported by experimental validation, to investigate the impact of lithiation-induced deformation on the energy dissipation of Si anodes. We quantitatively investigate the effects of several key design parameters—C-rate, Si layer thickness, and lithiation depth—on energy losses resulting from various mechanisms, such as mechanical energy loss, polarization, and joule heating.… More >

M. A. Hussain^a,*, P. J. Saikia^b, S. R. Devi^a, L. R. Singh^c

Chalcogenide Letters, Vol.21, No.2, pp. 151-159, 2024, DOI:10.15251/CL.2024.212.151

Abstract Nickel (Ni⁺²) doped nanocrystalline Bi₂S₃ thin films are deposited on the glass substrate from the solutions containing Bismuth Nitrate, Ethylenediamine Tetraacetic acid (EDTA) and Thioacetamide at a bath deposition temperature of 318K. The optical, surface morphological and electrical properties of Ni-doped Bi₂S₃ thin films prepared at three different doping concentration are investigate by using ultraviolet–visible transmission spectra (UV–Vis), Scanning electron microscopy (SEM), Energy Dispersive X-ray (EDAX) and thermo-e.m.f. techniques. The optical band gap energies are found in between 2.32-2.43 eV. The SEM images show that the prepared films are continuous, dense and distributed over the entire area More >