Special Issues

Chalcogen-Modified Metal Oxide Nanostructures: Interfacial Engineering, Electrochemical and Optoelectronic Behaviors

Submission Deadline: 01 April 2027 View: 70 Submit to Special Issue

Guest Editor(s)

Assoc. Prof. Shang Wang

Email: wangshang@hit.edu.cn

Affiliation: State Key Laboratory of Precision Welding & Joining of Materials and Structures, Harbin Institute of Technology, Harbin, China

Homepage:

Research Interests: nanomaterials, zinc ion batteries, nano/micro-joining

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Assoc. Prof. Shuyue Li

Email: lishuyue@xauat.edu.cn

Affiliation: School of Mechanical and Electrical Engineering, Xi'an University of Architecture and Technology, China

Homepage:

Research Interests: aqueous batteries, nanomaterials

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Summary

Metal oxide nanostructures possess versatile physicochemical properties, while chalcogen modification enables rational modulation of heterointerface and carrier transport, greatly boosting their electrochemical and optoelectronic functionalities. Such composite systems represent a vibrant research frontier within chalcogenide functional materials.


This special issue focuses on chalcogen-engineered metal oxide nanoarchitectures. It aims to uncover the correlations among structure, interface and performance. Original research articles and review papers covering material synthesis, heterointerface regulation, mechanism exploration and multifunctional device development are welcome.


Suggested themes include but are not limited to:
• Controlled synthesis of chalcogen-modified metal oxide nanostructures
• Oxygen-chalcogen heterointerface engineering strategies
• Electrochemical kinetics for energy storage and electrocatalysis
• Optoelectronic response modulation of chalcogen/metal oxide hybrids
• Stability optimization of composite electrode materials
• Functional devices based on chalcogen-modified metal oxide nanomaterials


Keywords

metal oxide nanostructures, chalcogen modification, interfacial engineering, electrochemical behaviors, optoelectronic properties, functional devices

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